公开(公告)号：US12094700B2

公开(公告)日：2024-09-17

申请号：US17469228

申请日：2021-09-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiharu Hirata

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC classification number: H01J37/3482 ,  C23C14/3464 ,  C23C14/352 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447 ,  H01J37/3464 ,  H01J37/347 ,  H01J37/3479 ,  C23C14/35 ,  H01J37/3405

Abstract: There is provided a film forming method performed in a film forming apparatus having cathode units capable of installing a plurality of targets. The method comprises performing a film formation process using a first target between the first target and a second target that are disposed at the cathode units and are made of the same material, based on a recipe of the first target, receiving from a user, after a value for managing a lifespan of the first target has reached a predetermined threshold, selection of the second target to be used for the film forming process, and performing the film forming process using the selected second target based on a recipe in which setting of target-related control items of the recipe of the first target is converted for the selected second target.

公开(公告)号：US12094699B2

公开(公告)日：2024-09-17

申请号：US18237934

申请日：2023-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20240242964A1

公开(公告)日：2024-07-18

申请号：US18498438

申请日：2023-10-31

Applicant: SUPERQ TECHNOLOGIES INDIA PRIVATE LIMITED

Inventor： SUBHASH KANNAPPA MANOHARAN ,  MANJUNATH GANGAIAH ,  PURNIMA SETHI JOSAN ,  BALAJI SOMPALLE ,  PINAKIN MANSUKHLAL PADALIA ,  AMLAN MUKHERJEE ,  NAGENDRA NAGARAJA

IPC: H01L21/02 ,  C23C14/08 ,  C23C14/35 ,  C23C14/58 ,  H01J37/34

CPC classification number: H01L21/02266 ,  C23C14/083 ,  C23C14/35 ,  C23C14/5806 ,  H01J37/3405 ,  H01L21/02197 ,  H01J2237/332

Abstract: The embodiments herein provide a Crystalline Strontium Titanate (STO) and a method for deposition of the STO on a silicon substrate. The embodiments herein utilize radio-frequency (RF) magnetron sputtering to grow crystalline pure phase Strontium Titanate SrTiO3 (STO) with single orientation upon a surface of oriented Silicon (Si) substrates followed by annealing at 800° C. for 1 hour in ambient conditions. Furthermore, the embodiments herein completely eliminates the buffer layer which is generally needed beneath the STO thin films, making the deposition of STO films on silicon substrates much more cost-effective than the existing method. Hence a single crystal STO film is directly obtained on the silicon substrate at the end of the process.

公开(公告)号：US20240213007A1

公开(公告)日：2024-06-27

申请号：US18089216

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Junjie PAN ,  Yida LIN ,  Xiangjin XIE ,  Martin Lee RIKER ,  Suhas UMESH ,  Keith A. MILLER

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3464 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3476 ,  H01J2237/332

Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.

公开(公告)号：US20240203715A1

公开(公告)日：2024-06-20

申请号：US18287318

申请日：2022-04-07

Applicant: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： June Seo KIM ,  Joon Woo KIM

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/18

CPC classification number: H01J37/3405 ,  C23C14/35 ,  C23C14/56 ,  H01J37/18 ,  H01J2237/002

Abstract: A magnetron sputtering device according to the present disclosure includes a chamber having a vacuum state therein, a gas supply pipe configured to supply argon (Ar) gas into the chamber, a sputtering head provided within the chamber and including a sputtering target and a magnetic body disposed on a bottom end of the sputtering target to generate a magnetic field, a power supply configured to supply current to the sputtering target to generate plasma, a cooling device including a refrigerant pipe, through which refrigerant circulating from outside the chamber to the sputtering head, flows and configured to cool the sputtering head to a low temperature, a sputtering shield surrounding an area of the refrigerant pipe located outside the chamber and including a refrigerant inlet and a refrigerant outlet communicating with the refrigerant pipe, wherein the sputtering shield including a communication hole communicating with the chamber to have a vacuum state therein and the refrigerant pipe delivers the refrigerant while being disposed in a dual vacuum structure, wherein in the dual vacuum structure, an area of the refrigerant pipe located outside the chamber is disposed within the sputtering shield having the vacuum state, and an area of the refrigerant pipe located between the sputtering shield and the sputtering head is disposed within the chamber having the vacuum state.

公开(公告)号：US20240194464A1

公开(公告)日：2024-06-13

申请号：US18529106

申请日：2023-12-05

Applicant: INTEVAC, INC.

Inventor： Samuel D. Harkness, IV ,  Thomas P. Nolan ,  Stephen M. Daly

IPC: H01J37/34

CPC classification number: H01J37/3438 ,  H01J37/3452 ,  H01J37/3461 ,  H01J37/3405 ,  H01J2237/3323

Abstract: An anode for a plasma chamber, having an anode block having a front surface to face a plasma and a rear surface to face away from the plasma; a magnet positioned within the anode block and generating magnetic field lines extending outwardly from the front surface of the anode block; and an electron filter bar spaced apart and extending over the front surface of the anode block and intercepting at least part of the magnetic field lines.

公开(公告)号：US20240186128A1

公开(公告)日：2024-06-06

申请号：US18418930

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Alan RITCHIE ,  John C. FORSTER ,  Muhammad RASHEED

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32504 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US11948784B2

公开(公告)日：2024-04-02

申请号：US17507252

申请日：2021-10-21

Applicant: Applied Materials, Inc.

Inventor： Harish Penmethsa ,  Hong S. Yang ,  Suresh Palanisamy

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/54

CPC classification number: H01J37/3455 ,  C23C14/3407 ,  C23C14/352 ,  C23C14/505 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3497 ,  C23C14/351

Abstract: Apparatus and methods for improving film uniformity in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber, the pedestal having an upper surface configured to support a substrate thereon, a first motor coupled to the pedestal, a lid assembly comprising a first target, a first magnetron disposed over a portion of the first target, and in a region of the lid assembly that is maintained at atmospheric pressure, a first actuator configured to translate the first magnetron in a first direction, a second actuator configured to translate the first magnetron in a second direction, and a system controller that is configured to cause the first magnetron to translate along at least a portion of a first path by causing the first actuator and second actuator to simultaneously translate the first magnetron.

公开(公告)号：US11932934B2

公开(公告)日：2024-03-19

申请号：US17941137

申请日：2022-09-09

Applicant: Applied Materials, Inc.

Inventor： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC: C23C14/54 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/54 ,  C23C14/0605 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3467 ,  H01J37/3455 ,  H01J2237/002 ,  H01J2237/332

Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US11915917B2

公开(公告)日：2024-02-27

申请号：US16902194

申请日：2020-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan Ritchie ,  John C. Forster ,  Muhammad Rasheed

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32504 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.