公开(公告)号：US20120243339A1

公开(公告)日：2012-09-27

申请号：US13428965

申请日：2012-03-23

Applicant: Boyoung Seo ,  Yongkyu Lee ,  Hyucksoo Yang ,  Yongtae Kim ,  Byungsup Shim

Inventor： Boyoung Seo ,  Yongkyu Lee ,  Hyucksoo Yang ,  Yongtae Kim ,  Byungsup Shim

IPC: G11C16/04 ,  H01L29/788

CPC classification number: G11C16/0425 ,  G11C16/0416 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/3445 ,  H01L21/28273 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/7881

Abstract: Nonvolatile memory devices can include a floating gate on a substrate, with a first tunnel insulating film therebetween. A memory gate can be on the floating gate, with a blocking insulating film therebetween. A word line can be located at a first side of both the memory gate and the floating gate, with a second tunnel insulating film therebetween. The first side of the floating gate can protrude beyond the first side of the memory gate toward the word line.

Abstract translation: 非易失性存储器件可以包括衬底上的浮动栅极，其间具有第一隧道绝缘膜。 存储器栅极可以在浮动栅极上，其间具有阻挡绝缘膜。 字线可以位于存储栅极和浮动栅极的第一侧，其间具有第二隧道绝缘膜。 浮动栅极的第一侧可以突出超过存储器栅极的第一侧朝向字线。