公开(公告)号：US2882587A

公开(公告)日：1959-04-21

申请号：US62745356

申请日：1956-12-10

Applicant: RAYTHEON MFG CO

Inventor： MCCOWAN UNGER ROBERT ,  ROBERT HARPER

IPC: H01J23/28

CPC classification number: H01J23/28 ,  Y10T29/49016

公开(公告)号：US2827588A

公开(公告)日：1958-03-18

申请号：US28276252

申请日：1952-04-17

Applicant: CSF

Inventor： PIERRE GUENARD ,  ROBERT WARNECKE ,  RENE BERTEROTTIERE

IPC: H01J23/28

CPC classification number: H01J23/28

公开(公告)号：US2806973A

公开(公告)日：1957-09-17

申请号：US55650755

申请日：1955-12-30

Applicant: ITT

Inventor： MCEWAN ALEXANDER W ,  ANDERSON CHARLES E ,  DANIELS CARL V

IPC: H01J23/28 ,  H01J25/38

CPC classification number: H01J25/38 ,  H01J23/28

公开(公告)号：US10062538B2

公开(公告)日：2018-08-28

申请号：US14876191

申请日：2015-10-06

Applicant: Nanyang Technological University

Inventor： Sheel Aditya ,  Zhao Chen

IPC: H01J25/34 ,  H01J23/26 ,  H01J23/28

CPC classification number: H01J25/34 ,  H01J23/26 ,  H01J23/28

Abstract: According to embodiments of the present invention, an electron device is provided. The electron device includes a support substrate, a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam, and a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate at only one or more support substrate portions overlapping with the conductive planar slow-wave structure. According to further embodiments of the present invention, a method for manufacturing an electron device is also provided.

公开(公告)号：US3792302A

公开(公告)日：1974-02-12

申请号：US3792302D

申请日：1972-12-22

Applicant: RAYTHEON CO

Inventor： DOWNING A ,  KRAHN H

IPC: H01J23/28 ,  H01J25/34

CPC classification number: H01J23/28

Abstract: A very high frequency electromagnetic energy device with a slow wave structure is disclosed having impedance matching means and lumped as well as distributed elements for energy propagation. An embodiment comprises a backward wave oscillator device incorporating elements used at microwave frequencies together with lumped capacitance and inductance elements to provide a device operative in a frequency range of, illustratively 100 to 200 MHz.

Abstract translation: 公开了一种具有慢波结构的非常高频率的电磁能量装置，其具有阻抗匹配装置和集中以及用于能量传播的分布元件。 一个实施例包括一个反向波形振荡器装置，其包括微波频率下使用的元件以及集中的电容和电感元件，以提供在例如100至200MHz的频率范围内工作的器件。

公开(公告)号：US2960622A

公开(公告)日：1960-11-15

申请号：US72233158

申请日：1958-03-18

Applicant: INT STANDARD ELECTRIC CORP

Inventor： EDWARD BETTY CHARLES ,  ALFRED EVANS

IPC: H01J23/28

CPC classification number: H01J23/28

公开(公告)号：US2911556A

公开(公告)日：1959-11-03

申请号：US49558455

申请日：1955-03-21

Applicant: CSF

Inventor： DANIEL CHARLES ,  BERNARD EPSZTEIN

IPC: H01J23/28 ,  H01J25/40

CPC classification number: H01J23/28 ,  H01J25/40

公开(公告)号：US2889486A

公开(公告)日：1959-06-02

申请号：US34331653

申请日：1953-03-19

Applicant: CSF

Inventor： GUENARD PIERRE R ,  PALLUEL PIERRE C

IPC: H01J23/24 ,  H01J23/28

CPC classification number: H01J23/28 ,  H01J23/24

公开(公告)号：US2888595A

公开(公告)日：1959-05-26

申请号：US27592852

申请日：1952-03-11

Applicant: CSF

Inventor： ROBERT WARNECKE ,  PIERRE GUENARD

IPC: H01J23/28

CPC classification number: H01J23/28

公开(公告)号：US2872650A

公开(公告)日：1959-02-03

申请号：US56589156

申请日：1956-02-16

Applicant: MONOGRAM PREC IND INC

Inventor： WINKLER RICHARD H

IPC: H01J23/28

CPC classification number: H01J23/28