公开(公告)号：US07749904B2

公开(公告)日：2010-07-06

申请号：US11748574

申请日：2007-05-15

Applicant: Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

Inventor： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

IPC: H01L21/44

CPC classification number: H01L21/76808

Abstract: An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

Abstract translation: 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。

公开(公告)号：US07241682B2

公开(公告)日：2007-07-10

申请号：US10789083

申请日：2004-02-27

Applicant: Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

Inventor： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

IPC: H01L21/4763

CPC classification number: H01L21/76808

Abstract: An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

Abstract translation: 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。

公开(公告)号：US06664011B2

公开(公告)日：2003-12-16

申请号：US10005806

申请日：2001-12-05

Applicant: Burn-Jeng Lin ,  Shinn-Sheng Yu ,  Bang-Chein Ho

Inventor： Burn-Jeng Lin ,  Shinn-Sheng Yu ,  Bang-Chein Ho

IPC: G03F900

CPC classification number: G03F1/30 ,  G03F1/70 ,  G03F7/0035 ,  G03F7/70283 ,  H01L21/0274 ,  H01L21/31144

Abstract: A new method is provided for the creation of contact holes. The DOF and MEF of closely packed holes can be improved using Alternating Phase Shifting Mask (Alt PSM) for the exposure of the holes. However, Alt PSM are dependent on hole density or hole separation and are less effective where holes are relatively further separated from each other. In order to improve DOF and MEF performance for the creation of holes, the invention adds extra holes to a given pattern of contact holes on the surface of a first mask, thus densifying the pattern of holes on the first mask and therefore reducing the range of the hole-diameter to hole separation ratio. The pattern of added holes is alternating in phase with the pattern of desired holes. The added holes will be filled up using a second mask.

Abstract translation: 提供了一种创建接触孔的新方法。 密封孔洞的DOF和MEF可以通过使用交替移相掩模（Alt PSM）进行改进，用于曝光孔。 然而，Alt PSM取决于孔密度或孔分离，并且在孔相对进一步分离的情况下效果较差。 为了改善用于产生孔的DOF和MEF性能，本发明为第一掩模的表面上的给定图案的接触孔增加了额外的孔，从而使第一掩模上的孔的图案致密化，因此减小了 孔径与孔分离比。 添加的孔的图案与期望的孔的图案相位交替。 添加的孔将使用第二个掩模填充。

公开(公告)号：US06538086B1

公开(公告)日：2003-03-25

申请号：US09514921

申请日：2000-02-28

Applicant: Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jui-Fa Chang ,  Jian-Hong Chen ,  Ming-Chia Tai

Inventor： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jui-Fa Chang ,  Jian-Hong Chen ,  Ming-Chia Tai

IPC: C08F3402

CPC classification number: C08F232/04 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

Abstract: The present invention relates to a polymer with at least one pericyclic protective group such as 2-methyl-2-bicyclo[2,2,1]heptanyl. The resist composition containing the polymer can be used as a chemically amplified resist and exhibits strong etch resistance. In addition, a line-and-space pattern of 0.1 &mgr;m pitch can be resolved successfully using the resist composition.

Abstract translation: 本发明涉及具有至少一个周环保护基团的聚合物，例如2-甲基-2-双环[2,2,1]庚基。 含有该聚合物的抗蚀剂组合物可以用作化学放大型抗蚀剂并具有很强的抗蚀刻性。 此外，可以使用抗蚀剂组合物成功地解决0.1μm间距的线间距图案。

公开(公告)号：US06303725B1

公开(公告)日：2001-10-16

申请号：US09675875

申请日：2000-09-29

Applicant: Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Ting-Chun Liu ,  Tzu-Yu Lin

Inventor： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Ting-Chun Liu ,  Tzu-Yu Lin

IPC: C08F3400

CPC classification number: C08F32/00 ,  C09D4/00 ,  C08F232/00

Abstract: The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur, —CH2—, and —SiH2—, wherein each R1 is independently selected from C1-20 alkyl and phenyl.

Abstract translation: 本发明提供环状二酮聚合物，其是选自由式（I）和（II）表示的环状二酮单体的均聚物或共聚物，其中A和B可以相同或不同，并且独立地选自 由卤素，氢，C 3-20环状或脂环族烷基，C 1-20直链和支链烷基，C6-20芳基，C7-20芳基烷基，C7-20烷基芳基，甲硅烷基，烷基甲硅烷基，甲基，烷基锗烷基，烷氧基羰基，酰基和 杂环组 或者A和B连接在一起形成C3-20饱和或不饱和环状烃基或取代或未取代的杂环基; C选自氧，硫，-CH 2 - 和-SiH 2 - ，其中 每个R 1独立地选自C 1-20烷基和苯基。