CATALYST COMPOSITION, PRODUCTION PROCESS FOR NORBORNENE BASE COPOLYMER BY USING CATALYST COMPOSITION, NORBORNENE BASE COPOLYMER AND HEAT RESISTANT FILM PREPARED BY USING THE SAME
    8.
    发明申请
    CATALYST COMPOSITION, PRODUCTION PROCESS FOR NORBORNENE BASE COPOLYMER BY USING CATALYST COMPOSITION, NORBORNENE BASE COPOLYMER AND HEAT RESISTANT FILM PREPARED BY USING THE SAME 审中-公开
    催化剂组合物,通过使用催化剂组合物制备NORBENNENE BASE共聚物的生产方法,使用它们制备的NORBENNENE BASE COPOLYMER和耐热膜

    公开(公告)号:US20130116113A1

    公开(公告)日:2013-05-09

    申请号:US13810607

    申请日:2011-07-25

    IPC分类号: C08F222/26

    摘要: Provided are a catalyst composition comprising a main catalyst (A) and a promoter (B), wherein the main catalyst (A) is a complex represented by Formula (1): MLnK1xK2yK3z   (1) (wherein M is one transition metal selected from groups 8 to 10 elements; L is a cyclopentadienyl base ligand containing; K1 to K3 are anionic or neutral ligands which are different from each other; n is an integer of 0 to 2; x, y and z each are an integer including 0, and a sum thereof is 1 to 7); and the promoter (B) is a compound (a) reacted with the main catalyst (A) to form a cationic compound, used for a high molecular weight addition copolymer of a norbornene compound having a polar group, a process for producing the copolymer using the above catalyst composition, and a film of the above copolymer.

    摘要翻译: 提供了包含主催化剂(A)和促进剂(B)的催化剂组合物,其中主催化剂(A)是由式(1)表示的络合物:MLnK1xK2yK3z(1)(其中M是选自基团 8至10个元素; L是含有的环戊二烯基碱配体; K1至K3是彼此不同的阴离子或中性配体; n是0-2的整数; x,y和z各自是包括0的整数,和 其总和为1至7); 促进剂(B)是与主催化剂(A)反应形成阳离子化合物的化合物(a),用于具有极性基团的降冰片烯化合物的高分子量加成共聚物,使用 上述催化剂组合物和上述共聚物的膜。

    Novel ArF photoresist copolymers
    9.
    发明申请
    Novel ArF photoresist copolymers 有权
    新型ArF光致抗蚀剂共聚物

    公开(公告)号:US20040131968A1

    公开(公告)日:2004-07-08

    申请号:US10740962

    申请日:2003-12-18

    IPC分类号: C08F232/00

    CPC分类号: G03F7/039 C08F232/04

    摘要: A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.

    摘要翻译: 由一种或多种羧基取代的双环烯烃单体制备光致抗蚀剂共聚物,该共聚物用于制备使用深紫外(ArF)作为光源的亚微光刻工艺的光致抗蚀剂。 除了具有高耐蚀刻性和耐热性之外,光致抗蚀剂对基材具有良好的粘附性,并且可以在TMAH溶液中显影。