公开(公告)号：US06261878B1

公开(公告)日：2001-07-17

申请号：US09337174

申请日：1999-06-21

Applicant: Brian S. Doyle ,  Brian Roberds ,  Rafael Rios

Inventor： Brian S. Doyle ,  Brian Roberds ,  Rafael Rios

IPC: H01L2100

CPC classification number: H01L29/78621 ,  H01L29/78606 ,  H01L29/78696

Abstract: An integrated circuit and method for making it are described. The integrated circuit includes a first insulating layer formed on a substrate and a body strap of a first conductivity type that is formed on the first insulating layer. A second insulating layer is formed on the first insulating layer adjacent to the body strap and a film is formed on the second insulating layer. The integrated circuit also includes a gate electrode formed on the film. A plurality of doped regions of a second conductivity type are formed within the film that extend from the surface of the film to the surface of the second insulating layer. The doped regions have junctions that are each spaced from the body strap by at least about 500 angstroms.

Abstract translation: 对集成电路及其制作方法进行说明。 集成电路包括形成在基板上的第一绝缘层和形成在第一绝缘层上的第一导电类型的主体带。 在与体带相邻的第一绝缘层上形成第二绝缘层，并且在第二绝缘层上形成膜。 集成电路还包括形成在膜上的栅电极。 在薄膜内形成多个第二导电类型的掺杂区，从薄膜的表面延伸到第二绝缘层的表面。 掺杂区域具有与体带相隔至少约500埃的交点。