公开(公告)号：US08178921B2

公开(公告)日：2012-05-15

申请号：US12638233

申请日：2009-12-15

Applicant: Dong Sun Sheen ,  Sang Tae Ahn ,  Seok Pyo Song ,  Hyeon Ju An

Inventor： Dong Sun Sheen ,  Sang Tae Ahn ,  Seok Pyo Song ,  Hyeon Ju An

IPC: H01L29/78

CPC classification number: H01L29/78609 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.

Abstract translation: 半导体器件包括具有包括栅极形成区和隔离区的有源区的半导体衬底; 隔离层，其形成在所述半导体衬底的隔离区域中，以暴露包括所述栅极形成区的有源区的一部分的侧表面，使得包括所述栅极形成区的有源区的所述部分构成鳍状图案; 形成在包括鳍状图案的有源区上的硅外延层; 以及形成为覆盖其上形成有硅外延层的鳍图案的栅极。