公开(公告)号：US20070077713A1

公开(公告)日：2007-04-05

申请号：US11429890

申请日：2006-05-08

Applicant: Dae-Won Ha ,  Kong-Soo Lee ,  Sung-Sam Lee ,  Sang-Hyun Lee ,  Min-Young Shim

Inventor： Dae-Won Ha ,  Kong-Soo Lee ,  Sung-Sam Lee ,  Sang-Hyun Lee ,  Min-Young Shim

IPC: H01L21/336

CPC classification number: H01L27/10894 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/66628 ,  H01L29/7834

Abstract: In a semiconductor device having a recessed gate electrode and a method of fabricating the same, a channel trench is formed in a semiconductor substrate by etching the semiconductor substrate. A first semiconductor layer is formed on the semiconductor substrate that fills the channel trench. A second semiconductor layer is formed on the first semiconductor layer, the second semiconductor layer having a lower impurity concentration than the first semiconductor layer.

Abstract translation: 在具有凹陷栅电极的半导体器件及其制造方法中，通过蚀刻半导体衬底在半导体衬底中形成沟槽。 在半导体衬底上形成填充沟槽的第一半导体层。 第二半导体层形成在第一半导体层上，第二半导体层的杂质浓度低于第一半导体层。