摘要:
An object of the invention is to provide an image record apparatus and an image record method that can improve the use efficiency of a record medium for recording a video image from a camera. A NW control section (141) acquires the image quality and the resolution set in a camera (10) performing pre-record and calculates the maximum image size that can be transmitted by the camera (10), and a file system (142) calculates the number of images from the preset pre-record rate and pre-record time and reserves an area corresponding to the maximum image size of one pre-record image calculated by the NW control section (141) in an HDD (146). The NW control section (141) records a pre-record image transmitted from the camera (10) in the area reserved by the file system (142). When it records as many pre-record images as the number of pre-record images, it returns to the beginning of the area reserved by the file system (142) and continues recording a pre-record image is continued. When an alarm occurs while a pre-record image is recorded, the NW control section 141 determines that the pre-record image at the point in time is pre-record data.
摘要:
Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要:
An image recording/reproducing device is provided which, when a removable recording unit is mounted, can continuously use the unit while keeping previously recorded images and can improve convenience. A recording device 16 is an image recording/reproducing device and an HDD is a removable recording unit. When an HDD is added, the recording device 16 determines a format status of the added HDD, and further determines whether an HDD operation status, such as Single operation or Mirror operation, corresponds with a device operation status of the recording device 16 or not. The HDD operation status corresponds to a unit operation status. The recording device 16 recognizes an added HDD which is in the recording-device-formatted state and whose HDD operation status corresponds with the device operation status, with the current HDD operation status. The recording device 16 recognizes an added HDD which is in the recording-device-formatted sate and whose HDD operation status is different from the device operation status, with the HDD operation status rewritten such that it corresponds with the device operation status.
摘要:
Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要:
Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要:
Disclosed is a liquid coating composition for forming a top antireflective film that contains a polymer, the polymer containing, as a structural unit, a (meth)acrylate unit that has at least one polycyclic hydrocarbon group on its side chain and becomes more soluble to alkali by the action of an acid, the liquid coating composition comprising: (a) a water-soluble, film-forming component; (b) at least one fluorine-based compound selected from a perfluoroalkylcarboxylic acid having 4 or more carbon atoms and a perfluoroalkylsulfonic acid having 5 or more carbon atoms; and (c) a fluoroalkylsulfonic acid having 1–4 carbon atoms and/or an acidic compound consisting of a hydrocarbon having 1–4 carbon atoms in which one or more hydrogen atoms are substituted with a fluoloalkylsulfonyl group(s), with the proviso that one or more carbon atoms therein may be substituted with a nitrogen atom(s).
摘要:
Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要:
Disclosed is a photoresist stripping solution comprising: (a) a salt of hydrofluoric acid with a base free from metallic ions; and (b) a water-soluble organic solvent, wherein the content of the component (a) is 0.001 to 0.1 mass % based on the total mass of the photoresist stripping solution. Also disclosed is a method of treating a substrate, which comprises: forming a photoresist film on a substrate; subjecting it to light exposure and then to development; etching thereof with a photoresist pattern as a mask pattern; ashing the mask; and bringing the photoresist stripping solution into contact with the substrate.