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1.发明申请公开(公告)号：US20100056411A1
公开(公告)日：2010-03-04
申请号：US12591048
申请日：2009-11-05
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。
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2.发明申请Treating liquid for photoresist removal, and method for treating substrate 审中-公开处理用于光刻胶去除的液体，以及处理底物的方法公开(公告)号：US20080242575A1
公开(公告)日：2008-10-02
申请号：US12155386
申请日：2008-06-03
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。
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公开(公告)号：US20090291565A1
公开(公告)日：2009-11-26
申请号：US12458992
申请日：2009-07-29
IPC分类号： H01L21/465
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译： 公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层 光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。 本发明提供一种剥离光致抗蚀剂的方法，其即使在不包括至少Cu布线和低介电层的基板的微图案中的不包括O 2等离子体灰化处理的工艺中，也能够有效地剥离光刻胶膜和蚀刻残留物 在其中，如在双镶嵌形成工艺中，并且另外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗腐蚀性。
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4.发明申请Cleaning solution, method for cleaning semiconductor substrate using the same, and method for forming metal wiring 审中-公开清洗液，使用其的半导体基板的清洗方法以及金属配线的形成方法公开(公告)号：US20050187118A1
公开(公告)日：2005-08-25
申请号：US11034864
申请日：2005-01-14
IPC分类号： H01L21/3213 , C11D7/10 , C11D7/26 , C11D7/50 , C11D11/00 , C23G1/12 , C23G1/22 , G03F7/42 , H01L21/304 , C23G1/00 , C11D1/00
CPC分类号： C11D7/10 , C11D7/264 , C11D7/5004 , C11D11/0047 , C23G1/125 , C23G1/22 , G03F7/423 , G03F7/426
摘要： The stripping-cleaning solution can advantageously strip a deposit generated on the top surface of a wiring without excessively etching the metal layer which constitutes the sidewall of the metal wiring pattern and the top surface of the wiring. The stripping-cleaning solution comprises at least a fluorine compound, a water-soluble organic solvent, water, and a bidentate ligand in an amount of 0.1 to 20% by mass based on the total mass of the tripping-cleaning solution. Alternatively, the stripping-cleaning solution comprises at least a basic aqueous solution, at least one selected from an organic compound having a carboxyl group and an anhydride thereof, water, and a bidentate ligand in an amount of 0.5 to 10% by mass based on the total mass of the stripping-cleaning solution.
摘要翻译： 剥离清洗液可以有利地剥离在配线的顶面上产生的沉积物，而不会过度地蚀刻构成金属布线图案的侧壁的金属层和布线的顶面。 剥离清洗液至少含有相对于脱扣清洗液的总质量为0.1〜20质量％的氟化合物，水溶性有机溶剂，水和二齿配位体。 或者，汽提清洗液至少含有碱性水溶液，选自有羧基羧酸的有机化合物及其酸酐中的至少一种，水和二齿配位体，其含量为0.5〜10质量％ 汽提清洁溶液的总质量。
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公开(公告)号：US20050176259A1
公开(公告)日：2005-08-11
申请号：US10512586
申请日：2003-04-25
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304 , C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译： 公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层 光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。 本发明提供了一种剥离光致抗蚀剂的方法，其即使在不包括O 2等离子体灰浆化处理的工艺中，也能够有效地剥离光致抗蚀剂膜和蚀刻残留物，在至少具有至少 Cu布线和其中的低介电层，如在双镶嵌形成工艺中，此外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗 - 腐蚀性
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公开(公告)号：US20110000874A1
公开(公告)日：2011-01-06
申请号：US12883592
申请日：2010-09-16
IPC分类号： C25F3/12
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译： 公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层 光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。 本发明提供一种剥离光致抗蚀剂的方法，其即使在不包括至少具有Cu布线和低介电层的基板的微图案中的O 2等离子体灰化处理的工艺中，也能够有效地剥离光刻胶膜和蚀刻残留物 在其中，如在双镶嵌形成工艺中，并且另外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗腐蚀性。
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公开(公告)号：US07442675B2
公开(公告)日：2008-10-28
申请号：US10864394
申请日：2004-06-10
申请人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi , Makarem A. Hussein , Lana I. Jong , Shan Christopher Clark
发明人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi , Makarem A. Hussein , Lana I. Jong , Shan Christopher Clark
CPC分类号： G03F7/425 , C11D7/06 , C11D7/267 , C11D7/32 , C11D7/34 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/31133
摘要： A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
摘要翻译： 洗涤剂组合物至少包含季铵氢氧化物，水溶性有机溶剂，水，防腐剂和氢氧化钾的总量的1质量％以下。 该清洁组合物可以从半导体衬底的表面单独且有效地除去光致抗蚀剂膜，掩埋材料，金属残留物。
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公开(公告)号：US20070298619A1
公开(公告)日：2007-12-27
申请号：US11889394
申请日：2007-08-13
IPC分类号： H01L21/302
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译： 公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层 光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。 本发明提供了一种剥离光致抗蚀剂的方法，其即使在不包括O 2等离子体灰浆化处理的工艺中也能有效剥离光致抗蚀剂膜和蚀刻残留物，其中至少具有至少 Cu布线和其中的低介电层，如在双镶嵌形成工艺中，此外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗 - 腐蚀性
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9.发明申请公开(公告)号：US20070105035A1
公开(公告)日：2007-05-10
申请号：US11645172
申请日：2006-12-26
IPC分类号： G03C11/12
CPC分类号： G03F7/423
摘要： Disclosed is a photoresist stripping solution comprising: (a) a salt of hydrofluoric acid with a base free from metallic ions; and (b) a water-soluble organic solvent, wherein the content of the component (a) is 0.001 to 0.1 mass % based on the total mass of the photoresist stripping solution. Also disclosed is a method of treating a substrate, which comprises: forming a photoresist film on a substrate; subjecting it to light exposure and then to development; etching thereof with a photoresist pattern as a mask pattern; ashing the mask; and bringing the photoresist stripping solution into contact with the substrate.
摘要翻译： 公开了一种光致抗蚀剂剥离溶液，其包含：（a）氢氟酸与不含金属离子的碱的盐; 和（b）水溶性有机溶剂，其中组分（a）的含量相对于光致抗蚀剂剥离溶液的总质量为0.001〜0.1质量％。 还公开了一种处理衬底的方法，其包括：在衬底上形成光致抗蚀剂膜; 使其曝光，然后进行开发; 用光刻胶图案作为掩模图案进行蚀刻; 灰化面具; 并使光致抗蚀剂剥离溶液与基材接触。
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公开(公告)号：US08354215B2
公开(公告)日：2013-01-15
申请号：US12883592
申请日：2010-09-16
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
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