公开(公告)号：US20160155969A1

公开(公告)日：2016-06-02

申请号：US14906000

申请日：2014-07-09

Applicant: TOPPAN FORMS CO., LTD. ,  OSAKA UNIVERSITY ,  THE UNIVERSITY OF TOKYO

Inventor： Takafumi Matsumoto ,  Junichi Takeya

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

CPC classification number: H01L51/055 ,  H01L51/0091 ,  H01L51/0545 ,  H01L51/105

Abstract: The transistor includes a gate electrode, an insulating layer, a semiconductor layer, a source electrode, and a drain electrode on a substrate, in which the gate electrode is formed by using silver β-ketocarboxylate denoted by General Formula (1) described below.

Abstract translation: 晶体管包括在基板上的栅电极，绝缘层，半导体层，源电极和漏电极，其中通过使用由下述通式（1）表示的银 - 酮 - 羧酸盐形成栅电极 。