Apparatus and methods for manipulating power at an edge ring in a plasma processing device

    公开(公告)号:US11276601B2

    公开(公告)日:2022-03-15

    申请号:US16845479

    申请日:2020-04-10

    Abstract: Methods and apparatus for processing a substrate positioned on a substrate support assembly are provided. For example, a substrate support assembly includes an electrostatic chuck having one or more chucking electrodes embedded therein for chucking a substrate to a substrate support surface of the electrostatic chuck; an edge ring disposed on the electrostatic chuck and surrounding the substrate support strike; two or more radio frequency (RF) power sources coupled to the edge ring and at least one of a baseplate disposed beneath the electrostatic chuck or an electrode disposed in the electrostatic chuck; a matching network coupling the edge ring to the two or more RF power sources; and an RF circuit coupling the edge ring to the two or more RF power sources, the RF circuit configured to simultaneously tune at least one of an RF amplitude or an RF phase of respective signals of the two or more RF power sources.

    Temperature and bias control of edge ring

    公开(公告)号:US11232933B2

    公开(公告)日:2022-01-25

    申请号:US17009670

    申请日:2020-09-01

    Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

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