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公开(公告)号：US20230076943A1
公开(公告)日：2023-03-09
申请号：US17985087
申请日：2022-11-10
Applicant: ASML Netherlands B.V.
Inventor： Lingling PU , Wei FANG , Zhong-wei CHEN
Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to he added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
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公开(公告)号：US20200211845A1
公开(公告)日：2020-07-02
申请号：US16730897
申请日：2019-12-30
Applicant: ASML Netherlands B.V.
Inventor： Lingling PU , Wei FANG , Zhong-wei CHEN
Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
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公开(公告)号：US20200211178A1
公开(公告)日：2020-07-02
申请号：US16718706
申请日：2019-12-18
Applicant: ASML Netherlands B.V.
Inventor： Wentian ZHOU , Liangjiang YU , Teng WANG , Lingling PU , Wei FANG
Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.
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公开(公告)号：US20200018944A1
公开(公告)日：2020-01-16
申请号：US16508087
申请日：2019-07-10
Applicant: ASML Netherlands B.V
Inventor： Wei FANG , Lingling PU , Thomas Jarik HUISMAN , Erwin Paul SMAKMAN
Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include acquiring a first scanning electron microscopy (SEM) image at a first resolution. The method may also include acquiring a second SEM image at a second resolution. The method may further include providing an enhanced image by using the first SEM image as a reference to enhance the second SEM image. The enhanced image may be provided by using one or more features extracted from the first image to enhance the second SEM image, or using the first SEM image as a reference to numerically enhance the second SEM image.
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