Selecting OLED devices using figure of merit
    21.
    发明申请
    Selecting OLED devices using figure of merit 有权
    使用品质因数选择OLED器件

    公开(公告)号:US20060206224A1

    公开(公告)日:2006-09-14

    申请号:US11076810

    申请日:2005-03-10

    IPC分类号: G06F19/00

    CPC分类号: G06Q10/087 G06Q30/0601

    摘要: A method of selecting an OLED device to be manufactured based on customer requirements, including the customer providing first and second sets of requirements, providing a plurality of OLED device constructions based on the first and second sets of requirements, device architecture options, and a database including device component performance information. The method also includes providing a number of performance parameters of each of the device constructions, determining, based upon the second set of requirements, a figure of merit term comprising two or more parameters and including the importance of those parameters, and using the figure of merit term to calculate a figure of merit for the possible OLED device constructions.

    摘要翻译: 一种根据客户要求选择要制造的OLED器件的方法,包括提供第一和第二组要求的客户,基于第一和第二组要求提供多个OLED器件结构,器件架构选项和数据库 包括设备组件性能信息。 该方法还包括提供每个设备结构的许多性能参数,基于第二组要求,确定包括两个或多个参数并且包括那些参数的重要性的优点项,并且使用 优点来计算可能的OLED器件结构的品质因数。

    Color display device with enhanced pixel pattern
    22.
    发明申请
    Color display device with enhanced pixel pattern 有权
    具有增强像素图案的彩色显示设备

    公开(公告)号:US20050270444A1

    公开(公告)日:2005-12-08

    申请号:US10859314

    申请日:2004-06-02

    摘要: A color display device, comprising: an array of subpixels of at least four different colors, including at least two relatively higher luminous color subpixels and at least two relatively lower luminous color subpixels, wherein the subpixels are arranged into groups forming at least two distinct types of pixels, each pixel type including the two relatively higher luminous color subpixels and at least one of the two relatively lower luminous color subpixels, and wherein the pixel types are arranged in a pattern such that the relative locations of the two relatively higher luminous color subpixels in each pixel is repeated in adjacent pixels, and the relative location of at least one of the two relatively lower luminance color subpixels is not repeated in at least one adjacent pixel. Various embodiments of the invention enable color display devices with improved image display quality, with both the appearance of jagged lines and the appearance of banding reduced simultaneously.

    摘要翻译: 一种彩色显示装置,包括:至少四种不同颜色的子像素阵列,包括至少两个相对较高的发光子像素和至少两个相对较低的发光颜色子像素,其中子像素被排列成形成至少两种不同类型的组 的像素,每个像素类型包括两个相对较高的发光颜色子像素和两个相对较低的发光颜色子像素中的至少一个,并且其中像素类型被布置成使得两个相对较高的发光颜色子像素的相对位置 在相邻像素中重复每个像素,并且在至少一个相邻像素中不重复两个相对较低亮度的彩色子像素中的至少一个的相对位置。 本发明的各种实施例使得具有改善的图像显示质量的彩色显示设备能够同时缩短锯齿状线条的外观和条纹的外观。

    Purification process for chromium
    23.
    发明授权
    Purification process for chromium 失效
    铬的净化过程

    公开(公告)号:US6106765A

    公开(公告)日:2000-08-22

    申请号:US436813

    申请日:1999-11-09

    摘要: Purification process for chromium metal is conducted on chromium metal powder which has been compacted without additives at a pressure of at least 50,000 psi (35.times.10.sup.7 Pa) into a compacted body having a critical diffusion dimension of less than or equal to 25 mm. The purification process uses a hydrogen gas treatment at a temperature of 1200.degree. C. to 1600.degree. C. for a period of 2 hours to 10 hours using 0.8 m.sup.3 per Kg chromium metal of hydrogen gas or more. The hydrogen treated chromium metal compacted body is then further treated under vacuum at a pressure less than or equal to 100 .mu.m of Hg (15 Pa) at 1200.degree. C. to 1600.degree. C. for 2 hours to 10 hours. The combined hydrogen and vacuum treatment reduces the oxygen, carbon, sulfur and nitrogen impurities in the chromium metal and results in a chromium metal suitable for metallurgical and electronic applications.

    摘要翻译: 对铬金属粉末进行纯化处理,该铬金属粉末已经在没有添加剂的情况下在至少50,000psi(35×10 7 Pa)的压力下压实成具有小于或等于25mm的临界扩散尺寸的压实体中。 纯化方法在1200℃〜1600℃的温度下,使用0.8m 3 / Kg铬氢等金属氢气进行2小时〜10小时的氢气处理。 然后将氢处理的铬金属压实体在真空下在1200℃至1600℃下在小于或等于100微米Hg(15Pa)的压力下进一步处理2小时至10小时。 组合的氢气和真空处理减少了铬金属中的氧,碳,硫和氮杂质,并产生适用于冶金和电子应用的铬金属。