DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL AND DISPLAY APPARATUS

    公开(公告)号:US20220320205A1

    公开(公告)日:2022-10-06

    申请号:US17629026

    申请日:2021-04-23

    Abstract: A display base plate and a manufacturing method therefor, a display panel and a display apparatus, relates to the technical field of display. The display base plate includes: a substrate (101), a first electrode layer (102) formed on the substrate (101), and a first pixel definition layer (103) and a second pixel definition layer (104) formed on the first electrode layer (102); the first pixel definition layer (103) divides the substrate (101) into a plurality of pixel regions (105), each pixel region (105) includes a plurality of subpixel regions (1050) distributed along a first direction, and two adjacent subpixel regions (1050) are separated by the second pixel definition layer (104); in the first direction, surfaces of each pixel region (105) in contact with the first pixel definition layer (103) include a plurality of first curved surfaces (1061) and a plurality of second curved surfaces (1062), and the first curved surfaces (1061) and the second curved surfaces (1062) are protruded away from the pixel region (105) to which they belong.

    LIGHT EMITTING DIODE, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE

    公开(公告)号:US20220037614A1

    公开(公告)日:2022-02-03

    申请号:US17279664

    申请日:2020-07-08

    Abstract: The present disclosure provides a light-emitting diode, including a first electrode, a light-emitting functional layer and a second electrode which are stacked, the first electrode is a transparent electrode, the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface of the metal electrode layer away from the light-emitting functional layer. The metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm, and the semiconductor auxiliary layer is made of IZO, a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm. The present disclosure further provides a light emitting device and a method of manufacturing a light emitting diode. The light-emitting diode has high color rendering index and low power consumption.

    ORGANIC ELECTROLUMINESCENT DEVICE AND DISPLAY DEVICE

    公开(公告)号:US20180375047A1

    公开(公告)日:2018-12-27

    申请号:US15737217

    申请日:2017-06-23

    Abstract: The present disclosure provides an organic electroluminescent device and a display device. The material of the blue light emitting layer in the organic electroluminescent device comprises an electron transport material and a hole transport material that can form a blue light exciplex. The proportions respectively occupied by the electron transport material and the hole transport material of the blue light emitting layer in all materials of the blue light emitting layer match with the abilities of the red light emitting layer and the green light emitting layer to transport electrons, so that electrons and holes would not recombine within and at an edge of the portion of the blue light emitting layer that covers the red light emitting layer and the green light emitting layer when the red light emitting layer and/or the green light emitting layer is required to emit light.

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