公开(公告)号：US09831236B2

公开(公告)日：2017-11-28

申请号：US14699134

申请日：2015-04-29

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Chien-Hsin Lee ,  Xiangxiang Lu ,  Mahadeva Iyer Natarajan

IPC: H01L23/62 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L27/0266 ,  H01L27/0292 ,  H01L27/088 ,  H01L29/0619

Abstract: An electro-static discharge (ESD) protection transistor device includes a plurality of transistor gates that extend parallel to one another in a first direction and a plurality of source/drain diffusion areas that extend parallel to one another in a second direction perpendicular to the first direction. Each source/drain diffusion area comprises a plurality of source/drain areas disposed between respective ones of the plurality of transistor gates. The ESD protection transistor device further includes a source contact positioned over each source area of the plurality of source areas and a drain contact positioned over each drain area of the plurality of drain areas. With respect to each source/drain diffusion area of the plurality of source/drain diffusion areas, the source contacts are offset from the drain contacts with respect to the first direction.