公开(公告)号：US20190393336A1

公开(公告)日：2019-12-26

申请号：US16481028

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Jeffrey S. LEIB ,  Daniel B. BERGSTROM ,  Christopher J. WIEGAND

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L23/532 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/02

Abstract: Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconductor feature, the dielectric layer having a trench exposing a portion of the semiconductor feature, the portion having a non-flat topography. A metallic contact material is directly on the portion of the semiconductor feature. The metallic contact material is conformal with the non-flat topography of the portion of the semiconductor feature. The metallic contact material has a total atomic composition including 95% or greater of a single metal species.

公开(公告)号：US20190165136A1

公开(公告)日：2019-05-30

申请号：US15859410

申请日：2017-12-30

Applicant: Intel Corporation

Inventor： Subhash M. JOSHI ,  Jeffrey S. LEIB ,  Michael L. HATTENDORF

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over the top of the fin and laterally adjacent the sidewalls of the fin. A gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin. First and second semiconductor source or drain regions are adjacent the first and second sides of the gate electrode, respectively. First and second trench contact structures are over the first and second semiconductor source or drain regions, respectively, the first and second trench contact structures both comprising a U-shaped metal layer and a T-shaped metal layer on and over the entirety of the U-shaped metal layer.