公开(公告)号：US07504915B2

公开(公告)日：2009-03-17

申请号：US11444525

申请日：2006-06-01

申请人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

发明人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

IPC分类号： H01H51/22 ,  H01H67/02

CPC分类号： H01H50/642 ,  H01H50/023 ,  H01H50/026 ,  H01H50/043 ,  H01H50/14 ,  H01H50/24 ,  H01H2050/028 ,  H01H2050/044

摘要： An electromagnetic block and a movable block are attached onto a base in an inclination attitude. Contact mechanisms press-fitted from above the base are laterally arranged in the inclination attitude, and the contact mechanisms are arranged in parallel in upper and lower stages. Idle end portions of movable contact pieces in the contact mechanisms are latched in a card which is linearly moved in a lateral direction. Terminals are projected downward from a bottom surface of the base, one of the terminals is connected to the fixed contact pieces of the contact mechanism, and the other terminal is connected to the movable contact pieces of the contact mechanism. The upper contact mechanism and the lower contact mechanism are alternately arranged in the lateral direction.

摘要翻译： 电磁块和可移动块以倾斜姿态附接到基座上。 从底座上方压入的接触机构以倾斜姿态横向排列，并且接触机构在上下平行地布置。 接触机构中的可动接触片的空转端部被锁定在沿横向方向线性移动的卡中。 端子从基座的底面向下突出，其中一个端子连接到接触机构的固定接触片，另一个端子连接到接触机构的可动接触片。 上接触机构和下接触机构在横向上交替布置。

公开(公告)号：US20060279384A1

公开(公告)日：2006-12-14

申请号：US11444525

申请日：2006-06-01

申请人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

发明人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

IPC分类号： H01H51/22

CPC分类号： H01H50/642 ,  H01H50/023 ,  H01H50/026 ,  H01H50/043 ,  H01H50/14 ,  H01H50/24 ,  H01H2050/028 ,  H01H2050/044

摘要： An electromagnetic block and a movable block are attached onto a base in an inclination attitude. Contact mechanisms press-fitted from above the base are laterally arranged in the inclination attitude, and the contact mechanisms are arranged in parallel in upper and lower stages. Idle end portions of movable contact pieces in the contact mechanisms are latched in a card which is linearly moved in a lateral direction. Terminals are projected downward from a bottom surface of the base, one of the terminals is connected to the fixed contact pieces of the contact mechanism, and the other terminal is connected to the movable contact pieces of the contact mechanism. The upper contact mechanism and the lower contact mechanism are alternately arranged in the lateral direction.

公开(公告)号：US06524955B2

公开(公告)日：2003-02-25

申请号：US09804814

申请日：2001-03-13

申请人： Hideaki Fukuda ,  Hiroki Arai

发明人： Hideaki Fukuda ,  Hiroki Arai

IPC分类号： H01L2144

CPC分类号： C23C16/4581 ,  C23C16/4404

摘要： In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

摘要翻译： 在包括在半导体衬底上形成薄膜的反应室和基座的等离子体CVD装置中，进行预处理步骤以在基座的表面上形成表面层，使得表面层可以防止半导体衬底静电 粘附在基座的表面上。 预处理步骤包括将包含与用于成膜处理的气体相同的气体的气体引入反应室，并通过CVD工艺在基座表面上形成表面层的步骤。

公开(公告)号：US06413887B1

公开(公告)日：2002-07-02

申请号：US09650168

申请日：2000-08-29

申请人： Hideaki Fukuda ,  Hiroki Arai

发明人： Hideaki Fukuda ,  Hiroki Arai

IPC分类号： H01L2131

CPC分类号： H01L21/3185 ,  C23C16/308 ,  C23C16/345 ,  Y10S438/909

摘要： A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH4) and a nitrogen gas (N2) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.

摘要翻译： 提供了具有低氢浓度的小热负荷的等离子体氮化硅系膜的制造方法。 该方法是使用具有抽真空的反应室的等离子体CVD装置在待处理材料上制造氮化硅系膜。 该方法包括以规定的流量将作为原料气体的甲硅烷气体（SiH 4）和氮气（N 2）引入反应室的步骤，将待处理材料加热至规定温度。 此时，其特征在于，氮气的流量为甲硅烷气体的流量的100倍以上。

公开(公告)号：US06187691B1

公开(公告)日：2001-02-13

申请号：US09570195

申请日：2000-05-15

申请人： Hideaki Fukuda ,  Hiroki Arai ,  Yu Yoshizaki

发明人： Hideaki Fukuda ,  Hiroki Arai ,  Yu Yoshizaki

IPC分类号： H01L2131

CPC分类号： H01L21/3185 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/54 ,  Y10S438/905

摘要： A thin film is formed on a substrate in a film-forming apparatus which has upper and lower electrodes between which radio-frequency power is applied in a processing chamber, and a heater is used to heat the lower electrode on which the substrate is loaded. In one lot, at least one substrate is processed. The electrode is heated at the end of a stand-by period between lots and before starting the film-forming process.

摘要翻译： 在薄膜形成装置中的基板上形成有薄膜，该薄膜形成装置具有在处理室内施加有射频功率的上下电极，加热器用于加热载置基板的下电极。 在一个批次中，处理至少一个基板。 电极在批次之间和开始成膜过程之前的待机期间结束时被加热。