公开(公告)号：US07410889B2

公开(公告)日：2008-08-12

申请号：US11393747

申请日：2006-03-31

Applicant: Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

Inventor： Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1281

Abstract: A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Abstract translation: 依次在基板上形成硅层和保温层，接着利用具有尖锐的能量密度梯度的激光束进行激光加热处理，以引起部分Si层发生的超横向生长结晶。 保温层为结晶中的Si层提供额外的加热增强功能，以增加超横向生长长度。 然后，激光束被反复移动以照射基板，以完成整个基板的结晶处理。

公开(公告)号：US20080045042A1

公开(公告)日：2008-02-21

申请号：US11750577

申请日：2007-05-18

Applicant: Fang-Tsun Chu ,  Jia-Xing Lin

Inventor： Fang-Tsun Chu ,  Jia-Xing Lin

IPC: H01L21/428 ,  G03F1/00

CPC classification number: B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268

Abstract: A method for crystallizing an amorphous silicon layer is provided. (A) A substrate with an amorphous silicon layer thereon is provided. (B) A mask with a mask pattern is provided. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. (C) The first region pattern is selected as a first scanning region and the substrate is moved toward a first direction, such that a laser beam passes through the first region pattern to crystallize the amorphous silicon layer along the first direction. (D) The second region pattern is selected as a second scanning region and the substrate is moved toward a second direction, such that the laser beam passes through the second region pattern to crystallize the amorphous silicon layer along the second direction. (E) The steps of (C) and (D) are repeated to convert the whole amorphous silicon layer into a polysilicon layer.

Abstract translation: 提供了一种使非晶硅层结晶的方法。 （A）提供其上具有非晶硅层的基板。 （B）提供具有掩模图案的面具。 掩模图案包括第一区域图案和镜像对称的第二区域图案。 （C）第一区域图案被选择为第一扫描区域，并且基板朝向第一方向移动，使得激光束穿过第一区域图案以沿着第一方向结晶非晶硅层。 （D）第二区域图案被选择为第二扫描区域，并且基板朝向第二方向移动，使得激光束穿过第二区域图案以沿着第二方向结晶非晶硅层。 （E）重复（C）和（D）的步骤以将整个非晶硅层转化为多晶硅层。