Detecting defects on photomasks
    21.
    发明授权
    Detecting defects on photomasks 有权
    检测光掩模上的缺陷

    公开(公告)号:US06701004B1

    公开(公告)日:2004-03-02

    申请号:US09470082

    申请日:1999-12-22

    IPC分类号: G06K900

    CPC分类号: G03F1/84

    摘要: Defects on at least one photomask are detected by patterning alternating dice on a wafer with different process conditions. The different conditions, such as a length of exposure time and an optical focus condition, are configured to highlight and detect defect areas.

    摘要翻译: 通过在具有不同工艺条件的晶片上图案化交替的骰子来检测至少一个光掩模上的缺陷。 配置不同的条件,例如曝光时间长度和光学对焦条件,以突出显示和检测缺陷区域。