Read-only memory cell array and method for fabricating it
    21.
    发明授权
    Read-only memory cell array and method for fabricating it 失效
    只读存储单元阵列及其制造方法

    公开(公告)号:US06281557B1

    公开(公告)日:2001-08-28

    申请号:US09126173

    申请日:1998-07-30

    IPC分类号: H01L2976

    摘要: A read-only memory cell array has vertical MOS transistors formed on trench walls, and is programmed with a programming mask which covers only the areas at which a transistor is not to be produced. As a result, the word lines can be formed with minimum grid spacing and the risk of short-circuiting between adjacent word lines is eliminated by buried ploy stringers.

    摘要翻译: 只读存储单元阵列具有形成在沟槽壁上的垂直MOS晶体管,并且用仅覆盖晶体管不被产生的区域的编程掩模进行编程。 结果,字线可以以最小的网格间隔形成,并且相邻字线之间的短路的风险通过埋入的桁架桁架消除。

    Apparatus for applying thin layers onto a substrate
    22.
    发明授权
    Apparatus for applying thin layers onto a substrate 失效
    用于将薄层施加到基底上的装置

    公开(公告)号:US4865713A

    公开(公告)日:1989-09-12

    申请号:US185453

    申请日:1988-04-25

    IPC分类号: C23C14/54 C23C14/56 H01J37/32

    CPC分类号: H01J37/3244 C23C14/568

    摘要: Thin layers are deposited on a substrate such as a silicon substrate in series of evacuatable chambers into each of which an inert gas is admitted. In the case of a reactive sputtering deposition, a reactive gas is also admitted. Contamination between neighboring chambers with the reactive gas is prevented, and the chambers are rapidly charged with new reactive gas to achieve a stable gas flow by providing an inlet system including a pair of shut-off valves, and a closable flow governor, the shut-off valves and the flow governor being actuated in synchronism.

    摘要翻译: 薄层沉积在诸如硅衬底的衬底上,其中每个都可以容纳惰性气体。 在反应溅射沉积的情况下,也承认反应性气体。 防止相邻室与反应气体之间的污染,并且通过提供包括一对截止阀的入口系统和可关闭的流量调节器,闭合的流量调节器,快速充满新的反应气体以实现稳定的气体流动, 关闭阀和流量调节器被同步致动。