MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20220404966A1

    公开(公告)日:2022-12-22

    申请号:US17653385

    申请日:2022-03-03

    Abstract: According to one embodiment, a controller constructs a plurality of block groups. The plurality of block groups include at least a first block group configured using a first type block group and a second block group configured using a second block group. The first type block group includes a plurality of non-defective blocks obtained by selecting one or more non-defective blocks in an equal number from each of a plurality of dies or each of a plurality of planes. The second type block group includes a plurality of non-defective blocks. The number of non-defective blocks included in the second type block group is equal to the number of non-defective blocks included in the first type block.

    MEMORY SYSTEM CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20210223962A1

    公开(公告)日:2021-07-22

    申请号:US17019955

    申请日:2020-09-14

    Abstract: According to one embodiment, a controller of a memory system performs a first operation a plurality of times for each of a plurality of first blocks. The first operation includes a write operation for writing data in a first write mode for writing m-bit data per memory cell and a data erase operation. While a second block is not a defective block, the controller performs a second operation a plurality of times for the second block. The second operation includes a write operation for writing data in a second write mode for writing n-bit data per memory cell and a data erase operation. When the second block is a defective block, the controller selects a first block from the plurality of first blocks, and writes second write data to the selected first block in the second write mode.

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