FABRICATING METHOD OF CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY
    21.
    发明申请
    FABRICATING METHOD OF CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY 有权
    基于碳纳米管的场效应晶体管的制备方法和基于碳纳米管的场效应晶体管的制备方法

    公开(公告)号:US20140367632A1

    公开(公告)日:2014-12-18

    申请号:US14048197

    申请日:2013-10-08

    Abstract: There are provided a fabricating method of a carbon nanotube-based field effect transistor having an improved binding force with a substrate and a carbon nanotube-based field effect transistor fabricated by the fabricating method. The method includes forming an oxide film on a substrate, forming a photoresist pattern on the oxide film, forming a metal film on the entire surface of the oxide film having the photoresist pattern, removing the photoresist by lifting off, adsorbing carbon nanotubes on the substrate from which the photoresist is removed, performing an annealing process to the substrate to which the carbon nanotubes are adsorbed, and removing the metal film. Since an adhesive strength between a substrate and carbon nanotubes increases, stability and reliability of a field effect transistor can be improved. If the field effect transistor is applied to a liquid sensor or the like, a lifespan of the sensor can be extended and reliability of a measurement result obtained by the sensor can be improved.

    Abstract translation: 提供了一种通过制造方法制造的具有与衬底和基于碳纳米管的场效应晶体管的结合力提高的基于碳纳米管的场效应晶体管的制造方法。 该方法包括在基板上形成氧化膜,在氧化膜上形成光致抗蚀剂图案,在具有光致抗蚀剂图案的氧化膜的整个表面上形成金属膜,通过剥离除去光致抗蚀剂,在基板上吸附碳纳米管 从中除去光致抗蚀剂,对吸附有碳纳米管的基板进行退火处理,并除去金属膜。 由于衬底和碳纳米管之间的粘合强度增加,所以可以提高场效应晶体管的稳定性和可靠性。 如果将场效应晶体管施加到液体传感器等,则可以延长传感器的寿命,并且可以提高由传感器获得的测量结果的可靠性。

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