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    Push-up type portable charging cradle including stereo sound system
    22.
    发明授权
    Push-up type portable charging cradle including stereo sound system 有权
    上推型便携式充电座，包括立体声系统

    公开(公告)号：US07777450B2

    公开(公告)日：2010-08-17

    申请号：US11858027

    申请日：2007-09-19

    Applicant: Kyung-Jin Lee ,  Joon-Suh Kim ,  Chang-Soo Lee

    Inventor： Kyung-Jin Lee ,  Joon-Suh Kim ,  Chang-Soo Lee

    IPC: H02J7/00

    CPC classification number: H02J7/0044

    Abstract: A push-up type portable charging cradle having a stereo sound system is disclosed. The portable charging cradle includes a cradle body and a push-up type cradle rotatably mounted in the cradle body so that the push-up type cradle protrudes from or retracts to the top surface of the cradle body according to whether the push-up type cradle is pushed or not.

    Abstract translation: 公开了具有立体声系统的俯卧式便携式充电座。 便携式充电座包括支架体和可旋转地安装在支架体内的上推式托架，使得上推式托架根据上推式托架是否突出到托架主体的顶表面 被推或不推

    NANOWIRE AND MEMORY DEVICE USING IT AS A MEDIUM FOR CURRENT-INDUCED WALL DISPLACEMENT
    28.
    发明申请
    NANOWIRE AND MEMORY DEVICE USING IT AS A MEDIUM FOR CURRENT-INDUCED WALL DISPLACEMENT 有权
    使用它作为电流感应壁位移介质的纳米和存储器件

    公开(公告)号：US20110007559A1

    公开(公告)日：2011-01-13

    申请号：US12746473

    申请日：2008-12-04

    Applicant: Kyung-Jin Lee ,  Hyun-Woo Lee ,  Soon-Wook Jung

    Inventor： Kyung-Jin Lee ,  Hyun-Woo Lee ,  Soon-Wook Jung

    IPC: G11C11/14 ,  H01B5/02

    CPC classification number: G11C11/14 ,  B82Y10/00 ,  G11C11/5607 ,  G11C19/0808

    Abstract: Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same. The nanowire has perpendicular magnetic anisotropy and is configured in a manner that when a parameter Q, calculated by a saturation magnetization per unit area, a domain wall thickness and a spin polarizability of a ferromagnet that is a constituent material of the nanowire, has a value of (formula 1 should be inserted here) a domain wall thickness, a width “*′” and a thickness −* of the nanowire satisfy the relationship of (formula 2 should be inserted here) The present invention can be designed such that a current density capable of driving a memory device utilizing the current-driven domain wall displacement has a value of less than (formula 3 should be inserted here), through the determination of the optimal nanowire width and thickness satisfying a value of a critical current density, Jc for the domain wall displacement below a certain value required for commercialization, for a given material in the nanowire with perpendicular anisotropy. According to such a configuration of the present invention, the current density required for the domain wall displacement can be at least 10 times or further lowered than the current density in currently available nano wires. Therefore, the present invention is capable of solving the problems associated with high power consumption and malfunction of the device due to generation of Joule heat and is also capable of achieving low-cost production of memory devices. 3 × 10 8  A  /  cm 2 ≤ Q ≤ 10 9  A  /  cm 2 , ( 1 ) 1.39 T / λ + 4.51 ≤ W λ ≤ 1.53 T / λ + 4.44 ( 2 ) 10 7  A  /  cm 2 , ( 3 )

    Abstract translation: 本文公开了使用其的纳米线和电流诱导畴壁位移型存储器件。 纳米线具有垂直磁各向异性，并且以如下方式配置：当由单位面积的饱和磁化强度计算的参数Q为作为纳米线的构成材料的铁磁体的畴壁厚度和自旋极化率时，具有值 （式1应该插入）畴壁厚度，宽度“*”“和纳米线的厚度 - *满足关系（式2应该插在这里）本发明可以被设计成使得电流 通过确定满足临界电流密度值的最佳纳米线宽度和厚度，能够利用电流驱动畴壁位移驱动存储器件的密度具有小于（在此应插入公式3）的值Jc 对于具有垂直各向异性的纳米线中的给定材料，域壁位移低于商业化所需的一定值。 根据本发明的这种结构，畴壁位移所需的电流密度可以是目前可用的纳米线中的电流密度的10倍以上。 因此，本发明能够解决由于焦耳热的产生而导致的高功耗和故障的问题，并且也能够实现低成本地生产存储器件。 3×10 8 A / cm 2≤Q≤109 A / cm 2，（1）1.39 T /λ+4.51≤Wλ≤1.53T /λ+ 4.44（2）10 7 / cm 2，（3）

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