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    Magnetization alignment in a thin-film device
    2.
    发明授权
    Magnetization alignment in a thin-film device 有权

    公开(公告)号：US09852833B1

    公开(公告)日：2017-12-26

    申请号：US15195248

    申请日：2016-06-28

    申请人： Alcatel-Lucent USA Inc.

    发明人： Gavin D. Scott

    IPC分类号： H01H51/22 ,  H01F7/06

    CPC分类号： G11C11/14 ,  B82Y10/00 ,  B82Y25/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/025 ,  H01F10/3254 ,  H01L29/0665 ,  H01L29/66984 ,  H01L29/7613 ,  H01L43/12

    摘要： We disclose a magnetic device having a pair of coplanar thin-film magnetic electrodes arranged on a substrate with a relatively small edge-to-edge separation. In an example embodiment, the magnetic electrodes have a substantially identical footprint that can be approximated by an ellipse, with the short axes of the ellipses being collinear and the edge-to-edge separation between the ellipses being smaller than the size of the short axis. In some embodiments, the magnetic electrodes may have relatively small tapers that extend toward each other from the ellipse edges in the constriction area between the electrodes. Some embodiments may also include an active element inserted into the gap between the tapers and electrical leads connected to the magnetic electrodes for passing electrical current through the active element. When subjected to an appropriate external magnetic field, the magnetic electrodes can advantageously be magnetized to controllably enter parallel and antiparallel magnetization states.

    Energy efficient three-terminal voltage controlled memory cell
    5.
    发明授权
    Energy efficient three-terminal voltage controlled memory cell 有权
    节能三端电压控制存储单元

    公开(公告)号：US09589616B2

    公开(公告)日：2017-03-07

    申请号：US14927500

    申请日：2015-10-30

    申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

    发明人： Hao Meng ,  Yong Wee Francis Poh ,  Tze Ho Simon Chan

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/15 ,  G11C11/14

    CPC分类号： G11C11/161 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    摘要： Memory cell, method for operating the memory cell and method for fabricating the memory cell are disclosed. The memory cell includes at least three terminals, a first magnetic tunnel junction (MTJ) structure and a second MTJ structure. The first MTJ is coupled between a first terminal (FT) and a third terminal. A portion of the first MTJ is configured to include a first barrier layer disposed between a first fixed layer and a free layer (FL). A magnetization direction of the FL is used to store data, the magnetization direction being controlled by an electric field. The second MTJ is coupled between the FT and a second terminal, where a portion of the second MTJ is configured to include a second barrier layer disposed between a second fixed layer and the FL, where a tunnel magnetoresistance of the second barrier layer is used to read the data.

    摘要翻译： 公开了用于操作存储单元的存储单元，用于制造存储单元的方法。 存储单元包括至少三个端子，第一磁隧道结（MTJ）结构和第二MTJ结构。 第一MTJ耦合在第一终端（FT）和第三终端之间。 第一MTJ的一部分被配置为包括设置在第一固定层和自由层（FL）之间的第一阻挡层。 使用FL的磁化方向来存储数据，磁化方向由电场控制。 第二MTJ耦合在FT和第二端子之间，其中第二MTJ的一部分被配置为包括设置在第二固定层和FL之间的第二阻挡层，其中第二阻挡层的隧道磁阻用于 读取数据。

    Non-volatile logic device
    6.
    发明授权
    Non-volatile logic device 有权
    非易失性逻辑器件

    公开(公告)号：US09431599B2

    公开(公告)日：2016-08-30

    申请号：US14782318

    申请日：2014-05-19

    申请人： NANYANG TECHNOLOGICAL UNIVERSITY

    发明人： Wen Siang Lew ,  Chandrasekhar Murapaka ,  Indra Purnama ,  Sarjoosing Goolaup ,  Pankaj Sethi ,  Chinkhanlun Guite

    IPC分类号： G06F7/38 ,  H03K19/173 ,  H01L43/02 ,  H03K19/20 ,  H01L43/08

    CPC分类号： H01L43/02 ,  G11C11/14 ,  H01L43/08 ,  H03K19/20

    摘要： A non-volatile logic device, comprising: a first input element magnetizable along a first direction to impart or change a chirality of a domain wall traversing the first input element a second input element configured to transport the domain wall, a magnetization of the second input element along a second direction representing a second logical input; a bifurcated output section comprising a pair of output elements for receiving the domain wall from the second input element, a magnetization of at least part of the output elements being changeable by propagation of the domain wall along the output elements; and a non-magnetic conductive element; wherein the magnetization in an output element after propagation of the domain wall represents a value of a logical function selectable by passing an electrical current through the non-magnetic conductive element to induce a magnetic field of a desired magnitude and direction in the second input element.

    摘要翻译： 一种非易失性逻辑器件，包括：第一输入元件，其沿着第一方向可磁化，以赋予或改变穿过所述第一输入元件的畴壁的手性，所述第二输入元件配置成输送所述畴壁;第二输入 元件沿第二方向表示第二逻辑输入; 分支输出部分，包括用于从第二输入元件接收畴壁的一对输出元件，至少部分输出元件的磁化可通过畴壁沿着输出元件的传播而改变; 和非磁性导电元件; 其中所述畴壁传播之后的输出元件中的磁化表示通过使电流通过所述非磁性导电元件以在所述第二输入元件中引起期望的大小和方向的磁场而可选择的逻辑功能的值。

    System with magnetically stable states and method for asserting magnetically stable state
    8.
    发明授权
    System with magnetically stable states and method for asserting magnetically stable state 有权
    具有磁稳定状态的系统和用于断言磁稳定状态的方法

    公开(公告)号：US09224941B2

    公开(公告)日：2015-12-29

    申请号：US13809585

    申请日：2010-08-31

    申请人： Antonio Ruotolo

    发明人： Antonio Ruotolo

    IPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/02 ,  G11C11/18 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/08 ,  G11C11/02 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/18 ,  H01L27/222 ,  H01L27/228

    摘要： The disclosed subject matter relates to a non-volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or “dot”. For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.

    摘要翻译： 所公开的主题涉及用于固态数据存储的非易失性存储器位单元（500或600），包括例如细长磁性元件（102）或“点”。 对于点的适当几何形状和尺寸，可以稳定两倍的能量退化微磁结构（100或200）。 这种稳定的构造可以由两个磁旋涡（1081,1082）和花状态区域（110）组成。 由于能量最小化，花状态区域可以偏心（相对于短轴（106））并且沿着点的长轴（104）。 根据当前极性，垂直于该点处平面流动的电流（302）可以在两个镜面磁稳定配置（例如，写入操作）之间切换点的配置或状态， 。 电池状态的读取可以通过使用磁阻效应来实现。