公开(公告)号：US20150122303A1

公开(公告)日：2015-05-07

申请号：US14382439

申请日：2013-02-19

Applicant: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION ,  LINTEC CORPORATION

Inventor： Kunihisa Kato ,  Chihaya Adachi ,  Koji Miyazaki ,  Teruaki Hayakawa

IPC: H01L35/30 ,  H01L35/34 ,  H01L35/16

CPC classification number: H01L35/30 ,  H01L35/16 ,  H01L35/32 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

Abstract translation: 本发明提供一种具有低热导率并具有改善品质因数的热电转换材料及其制造方法。 在具有纳米级微孔纳米结构的基板上形成的热电转换材料通过将热电半导体材料形成为膜而制备的热电半导体层，其中，所述基板是由嵌段共聚物形成的嵌段共聚物基材，所述嵌段共聚物包含 聚甲基丙烯酸甲酯单元和多面体低聚倍半硅氧烷聚甲基丙烯酸酯单元，热电半导体材料是p型碲化铋或n型铋碲化物。 制造方法包括形成具有纳米结构的嵌段共聚物基材的基板形成工序，以及将形成p型碲化铋或n型铋碲的膜形成工序，形成热电半导体层。

公开(公告)号：US20150075578A1

公开(公告)日：2015-03-19

申请号：US14396527

申请日：2013-04-17

Applicant: LINTEC CORPORATION

Inventor： Kunihisa Kato ,  Tsuyoshi Mutou

IPC: H01L35/08 ,  H01L35/34

CPC classification number: H01L35/08 ,  H01L35/16 ,  H01L35/32 ,  H01L35/34

Abstract: The present invention provides a thermoelectric conversion material having a reduced thermal conductivity and having an improved figure of merit, and a method for producing the material. The thermoelectric conversion material has, as formed on a resin substrate having recesses, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the resin substrate comprises one formed by curing a resin layer of a curable resin composition. The production method for the thermoelectric conversion material comprises a resin substrate formation step of transcribing a protruding structure from an original plate having the protruding structure onto a resin layer of a curable resin composition and curing the layer, and a film formation step of forming a thermoelectric semiconductor layer of a thermoelectric semiconductor material on the resin substrate.

Abstract translation: 本发明提供具有降低的热导率并具有改善的品质因数的热电转换材料及其制造方法。 如果在具有凹部的树脂基板上形成由热电半导体材料形成的热电半导体层，则热电转换材料具有通过固化树脂组合物的树脂层而形成的树脂基板。 所述热电转换材料的制造方法包括将突出结构从具有突出结构的原版转印到固化性树脂组合物的树脂层上并使其固化的树脂基板形成工序，以及形成热电转换材料的热电转换材料的成膜工序 在树脂基板上的热电半导体材料的半导体层。