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公开(公告)号：US12239020B2
公开(公告)日：2025-02-25
申请号：US17913487
申请日：2021-03-18
Applicant: LINTEC CORPORATION
Inventor： Toshiya Yamasaki , Kunihisa Kato , Yuta Seki
IPC: H10N10/852 , H10N10/855 , H10N10/857
Abstract: Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.
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公开(公告)号：US11581469B2
公开(公告)日：2023-02-14
申请号：US17271021
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Kunihisa Kato , Tsuyoshi Muto , Masaya Todaka , Yuma Katsuta
Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.
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公开(公告)号：US20150048283A1
公开(公告)日：2015-02-19
申请号：US14385595
申请日：2013-03-11
Applicant: LINTEC CORPORATION , KYUSHU INSTITUTE OF TECHNOLOGY
Inventor： Kunihisa Kato , Tsuyoshi Mutou , Koji Miyazaki
Abstract: The present invention provides a thermoelectric conversion material excellent in thermoelectric performance and flexibility and capable of being produced in a simplified manner and at a low cost, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles and a conductive polymer, and the method for producing a thermoelectric conversion material includes a step of applying the thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles and a conductive polymer onto the support and drying it to forma thin film thereon.
Abstract translation: 本发明提供热电性能和柔性优异且能够以简单的方式和低成本制造的热电转换材料及其制造方法。 热电转换材料在载体上具有含有热电半导体微粒和导电性高分子的热电半导体组合物的薄膜，热电转换材料的制造方法具备以下步骤：将含有热电半导体的热电半导体组合物 颗粒和导电聚合物加载到载体上并干燥以在其上形成薄膜。
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公开(公告)号：US11895919B2
公开(公告)日：2024-02-06
申请号：US17271091
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Masaya Todaka , Kunihisa Kato , Tsuyoshi Muto , Yuma Katsuta
IPC: H10N10/00 , H10N10/817 , H10N10/852 , H10N10/01
CPC classification number: H10N10/01 , H10N10/817 , H10N10/852
Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer (2) on a substrate (1), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.
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5.发明授权公开(公告)号：US09608190B2
公开(公告)日：2017-03-28
申请号：US14770573
申请日：2014-02-18
Applicant: LINTEC CORPORATION , KYUSHU INSTITUTE OF TECHNOLOGY
Inventor： Kunihisa Kato , Tsuyoshi Mutou , Koji Miyazaki , Aiko Harada
Abstract: The invention provides a thermoelectric conversion material having a low thermal conductivity and an improved figure of merit and a production method for the material, and also provides a thermoelectric conversion module. The thermoelectric conversion material has, on a porous substrate having microscopic pores, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the porous substrate has a polymer layer (B) on a plastic film (A) and the microscopic pores are formed in the polymer layer (B) and in a part of the plastic film (A). The production method for the thermoelectric conversion material comprises a substrate formation step of forming a porous substrate including a step 1, a step 2 and a step 3, and comprises a film formation step of forming a thermoelectric semiconductor layer through film formation of a thermoelectric semiconductor material on the porous substrate. The thermoelectric conversion module uses the thermoelectric conversion material.
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Patent Agency Ranking
公开(公告)号：US20150013741A1
公开(公告)日：2015-01-15
申请号：US14379987
申请日：2013-02-19
Applicant: KYUSHU INSTITUTE OF TECHNOLOGY , LINTEC CORPORATION
Inventor： Tsuyoshi Mutou , Koji Miyazaki , Yoshika Hatasako , Kunihisa Kato
Abstract: The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer.
Abstract translation: 本发明提供一种热电转换材料，其结构被控制为具有纳米级微孔，并且具有低导热性并具有改善的热电性能指数。 在具有形成在嵌段共聚物基材上的热电半导体层的热电转换材料中，所述热电半导体层包含具有微孔的嵌段共聚物，其中所述嵌段共聚物包含由能形成玻璃化转变温度的均聚物的单体形成的聚合物单元（A） 为50℃以上，由共轭二烯类聚合物形成的聚合物单元（B）。
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公开(公告)号：US11974504B2
公开(公告)日：2024-04-30
申请号：US17786269
申请日：2020-12-01
Applicant: LINTEC Corporation
Inventor： Yuta Seki , Kunihisa Kato , Tsuyoshi Muto
IPC: H10N10/857 , H10N10/01 , H10N10/17
CPC classification number: H10N10/857 , H10N10/01 , H10N10/17
Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.
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公开(公告)号：US11581470B2
公开(公告)日：2023-02-14
申请号：US17271057
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Wataru Morita , Kunihisa Kato , Tsuyoshi Muto , Yuma Katsuta
Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.
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公开(公告)号：US11522114B2
公开(公告)日：2022-12-06
申请号：US16467745
申请日：2017-12-07
Applicant: LINTEC CORPORATION
Inventor： Kunihisa Kato , Wataru Morita , Tsuyoshi Mutou , Yuma Katsuta , Takeshi Kondo
Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.
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10.发明授权公开(公告)号：US11424397B2
公开(公告)日：2022-08-23
申请号：US16493345
申请日：2018-03-13
Applicant: LINTEC CORPORATION
Inventor： Kunihisa Kato , Wataru Morita , Tsuyoshi Muto , Yuma Katsuta
Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.
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