公开(公告)号：US11222686B1

公开(公告)日：2022-01-11

申请号：US17095978

申请日：2020-11-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Hidekazu Noguchi

IPC: G11C11/406 ,  G11C7/06 ,  G11C7/10 ,  G11C11/4076

Abstract: Refresh commands may be provided at random intervals from a memory controller to a memory device. In some examples, refresh requests may be provided at random intervals which may be used to provide refresh commands from the memory controller to the memory device at random intervals. In some examples, an average time interval between refresh requests may be equal to a refresh interval of the memory device. In some examples, a maximum number of times the memory controller may postpone providing a refresh command to the memory device may be a random number. In some examples, a maximum value of the random number may be based, at least in part, on a minimum number of refresh commands required within a time interval by the memory device.

公开(公告)号：US20210074341A1

公开(公告)日：2021-03-11

申请号：US17100368

申请日：2020-11-20

Applicant: Micron Technology, Inc.

Inventor： Yangsung Joo ,  Hidekazu Noguchi

IPC: G11C7/22 ,  G11C7/04 ,  G11C7/12 ,  G11C11/4076 ,  H03K5/13 ,  G11C11/408

Abstract: Apparatuses and methods for a temperature dependent delay between a wordline off signal and deactivating the wordline are disclosed. Memory devices may have reduced reliability when operating at relatively cold temperatures, which may be due in part to an increase in the write recovery time while the inning for a wordline to deactivate remains relatively unaffected. In some embodiments of the present disclosure, a delay circuit is used to insert a temperature dependent delay between a wordline off command being issued and the wordline being deactivated. The delay circuit may increase the length of temperature dependent delay at relatively cold temperatures, and decrease the length of the delay at relatively warm temperatures.

公开(公告)号：US20200211632A1

公开(公告)日：2020-07-02

申请号：US16232837

申请日：2018-12-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Hidekazu Noguchi

IPC: G11C11/406

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for distributed timing of targeted refresh operations. Information stored in volatile memory cells may decay unless refresh operations are performed. A memory device may perform auto-refresh operations, as well as one or more types of targeted refresh operations, where particular rows are targeted for a refresh. Targeted refresh operations may draw less power than an auto-refresh operation. It may be desirable to distribute targeted refresh operations throughout a sequence of refresh operations, to average out a power draw in the memory device. Responsive to an activation of a refresh signal, the memory device may perform a group of refresh operations. At least one refresh operation in each group may be a targeted refresh operation.