公开(公告)号：US20200090713A1

公开(公告)日：2020-03-19

申请号：US16133598

申请日：2018-09-17

Applicant: Micron Technology, Inc.

Inventor： Yangsung Joo ,  Hidekazu Noguchi

IPC: G11C7/22 ,  G11C7/04 ,  G11C7/12 ,  G11C11/408 ,  G11C11/4076 ,  H03K5/13

Abstract: Apparatuses and methods for a temperature dependent delay between a wordline off signal and deactivating the wordline are disclosed. Memory devices may have reduced reliability when operating at relatively cold temperatures, which may be due in part to an increase in the write recovery time while the timing for a wordline to deactivate remains relatively unaffected. In some embodiments of the present disclosure, a delay circuit is used to insert a temperature dependent delay between a wordline off command being issued and the wordline being deactivated. The delay circuit may increase the length of temperature dependent delay at relatively cold temperatures, and decrease the length of the delay at relatively warm temperatures.

公开(公告)号：US20210074341A1

公开(公告)日：2021-03-11

申请号：US17100368

申请日：2020-11-20

Applicant: Micron Technology, Inc.

Inventor： Yangsung Joo ,  Hidekazu Noguchi

IPC: G11C7/22 ,  G11C7/04 ,  G11C7/12 ,  G11C11/4076 ,  H03K5/13 ,  G11C11/408

Abstract: Apparatuses and methods for a temperature dependent delay between a wordline off signal and deactivating the wordline are disclosed. Memory devices may have reduced reliability when operating at relatively cold temperatures, which may be due in part to an increase in the write recovery time while the inning for a wordline to deactivate remains relatively unaffected. In some embodiments of the present disclosure, a delay circuit is used to insert a temperature dependent delay between a wordline off command being issued and the wordline being deactivated. The delay circuit may increase the length of temperature dependent delay at relatively cold temperatures, and decrease the length of the delay at relatively warm temperatures.

公开(公告)号：US11257529B2

公开(公告)日：2022-02-22

申请号：US17100368

申请日：2020-11-20

Applicant: Micron Technology, Inc.

Inventor： Yangsung Joo ,  Hidekazu Noguchi

IPC: G11C7/22 ,  G11C7/04 ,  G11C7/12 ,  G11C11/4076 ,  H03K5/13 ,  G11C11/408 ,  H03K5/00

Abstract: Apparatuses and methods for a temperature dependent delay between a wordline off signal and deactivating the wordline are disclosed. Memory devices may have reduced reliability when operating at relatively cold temperatures, which may be due in part to an increase in the write recovery time while the inning for a wordline to deactivate remains relatively unaffected. In some embodiments of the present disclosure, a delay circuit is used to insert a temperature dependent delay between a wordline off command being issued and the wordline being deactivated. The delay circuit may increase the length of temperature dependent delay at relatively cold temperatures, and decrease the length of the delay at relatively warm temperatures.