公开(公告)号：US10818673B2

公开(公告)日：2020-10-27

申请号：US16150412

申请日：2018-10-03

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  G11C11/402 ,  H01L29/78 ,  H01L29/66 ,  H01L23/49 ,  H01L23/538

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.