公开(公告)号：US10818673B2

公开(公告)日：2020-10-27

申请号：US16150412

申请日：2018-10-03

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  G11C11/402 ,  H01L29/78 ,  H01L29/66 ,  H01L23/49 ,  H01L23/538

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US20220344350A1

公开(公告)日：2022-10-27

申请号：US17862659

申请日：2022-07-12

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  H01L23/49 ,  H01L23/538 ,  G11C11/402 ,  H01L29/78 ,  H01L29/66

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US20200052113A1

公开(公告)日：2020-02-13

申请号：US16596423

申请日：2019-10-08

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762 ,  H01L23/49

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20190198668A1

公开(公告)日：2019-06-27

申请号：US15976720

申请日：2018-05-10

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L29/66

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20250151264A1

公开(公告)日：2025-05-08

申请号：US19013180

申请日：2025-01-08

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H10B12/00 ,  G11C11/402 ,  H01L23/49 ,  H01L23/538 ,  H10D30/01 ,  H10D30/63

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US11444088B2

公开(公告)日：2022-09-13

申请号：US17070759

申请日：2020-10-14

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  H01L23/49 ,  H01L23/538 ,  G11C11/402 ,  H01L29/78 ,  H01L29/66

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US20200111797A1

公开(公告)日：2020-04-09

申请号：US16150412

申请日：2018-10-03

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  G11C11/402 ,  H01L23/538 ,  H01L23/49

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US20250142875A1

公开(公告)日：2025-05-01

申请号：US19011229

申请日：2025-01-06

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H10D30/63 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/764 ,  H01L23/49 ,  H01L23/528 ,  H10B12/00 ,  H10B63/00 ,  H10D30/01 ,  H10D62/10 ,  H10D62/17 ,  H10D84/01 ,  H10D84/03

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US11024735B2

公开(公告)日：2021-06-01

申请号：US16596423

申请日：2019-10-08

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762 ,  H01L23/49 ,  H01L21/764

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US10461185B2

公开(公告)日：2019-10-29

申请号：US15976720

申请日：2018-05-10

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.