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公开(公告)号：US09019478B2
公开(公告)日：2015-04-28
申请号：US13498237
申请日：2010-11-18
申请人： Takashi Suzuki , Mitsuhito Mase
发明人： Takashi Suzuki , Mitsuhito Mase
IPC分类号： G01C3/08 , H01L27/146 , G01S7/481 , G01S7/486 , G01S17/89
CPC分类号： H01L27/14603 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14607 , H01L27/14609 , H01L27/14612
摘要： A range image sensor RS is provided with an imaging region consisting of a plurality of units arranged in a two-dimensional pattern, on a semiconductor substrate 1 and obtains a range image, based on charge quantities output from the units. One unit is provided with a photosensitive region, a plurality of third semiconductor regions 9a, 9b opposed to each other with a photogate electrode PG in between in a direction in which first and second long sides L1, L2 are opposed to each other, first and second transfer electrodes TX1, TX2 provided between the plurality of third semiconductor regions 9a, 9b and the photogate electrode PG, a plurality of fourth semiconductor regions 11a, 11b arranged with the third semiconductor regions 9a, 9b in between in the direction in which the first and second long sides L1, L2 are opposed to each other, and a plurality of third transfer electrodes TX3 provided respectively between the plurality of fourth semiconductor regions 11a, 11b and the photogate electrode PG.
摘要翻译： 范围图像传感器RS在半导体基板1上设置有由以二维图案排列的多个单元组成的成像区域，并且基于从该单元输出的电荷量获得范围图像。 一个单元设置有光敏区域，多个第三半导体区域9a，9b，其彼此相对，在第一和第二长边L1，L2彼此相对的方向上，光栅电极PG之间彼此相对，第一和 设置在多个第三半导体区域9a，9b和光栅电极PG之间的第二传输电极TX1，TX2，与第三半导体区域9a，9b布置的多个第四半导体区域11a，11b， 并且第二长边L1，L2彼此相对，以及分别设置在多个第四半导体区域11a，11b和光电极PG之间的多个第三转移电极TX3。
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公开(公告)号：US08976338B2
公开(公告)日：2015-03-10
申请号：US13813752
申请日：2011-06-16
申请人： Mitsuhito Mase , Takashi Suzuki
发明人： Mitsuhito Mase , Takashi Suzuki
CPC分类号： G01C3/00 , G01S7/4816 , G01S7/4861 , G01S17/89 , H01L27/14614
摘要： A photogate electrode has a planar shape of a rectangular shape having first and second long sides opposed to each other and first and second short sides opposed to each other. First and second semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second long sides are opposed. Third semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second short sides are opposed. The third semiconductor regions make a potential on the sides of the first and second short sides higher than a potential in a region located between the first and second semiconductor regions in a region immediately below the photogate electrode.
摘要翻译： 光栅电极具有矩形形状的平面形状，其具有彼此相对的第一和第二长边以及彼此相对的第一和第二短边。 第一和第二半导体区域彼此相对布置，其中光栅电极在第一和第二长边相对的方向之间。 第三半导体区域彼此相对布置，光栅电极在第一和第二短边相对的方向之间。 第三半导体区域使第一和第二短边的电位高于位于光栅电极正下方的区域中位于第一和第二半导体区域之间的电位。
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公开(公告)号：US08952427B2
公开(公告)日：2015-02-10
申请号：US13500130
申请日：2010-11-18
申请人： Takashi Suzuki , Mitsuhito Mase
发明人： Takashi Suzuki , Mitsuhito Mase
IPC分类号： H01L27/148 , G11C19/00 , H01L29/768 , H01L21/339 , G01S17/89 , H01L27/146 , G01S7/486
CPC分类号： G01S17/89 , G01S7/4863 , H01L27/14603 , H01L27/14609
摘要： A range image sensor capable of improving its aperture ratio and yielding a range image with a favorable S/N ratio is provided. A range image sensor RS has an imaging region constituted by a plurality of one-dimensionally arranged units on a semiconductor substrate 1 and yields a range image according to a charge amount issued from the units. One unit comprises a photoresponsive region; two pairs of third semiconductor regions 9a, 9b opposing each other while interposing a photogate electrode PG in the opposing direction of first and second longer sides L1, L2; first and second transfer electrodes TX1, TX2 disposed between the third semiconductor regions 9a, 9b and the photogate electrode PG; fourth semiconductor regions 11a, 11b arranged between the third semiconductor regions 9a, 9b such as to oppose each other while interposing the photogate electrode PG in the opposing direction of the first and second longer sides L1, L2; and third transfer electrodes TX3 disposed between the fourth semiconductor regions 11a, 11b and the photogate electrode PG.
摘要翻译： 提供能够提高其开口率并产生具有良好S / N比的范围图像的距离图像传感器。 范围图像传感器RS具有由半导体衬底1上的多个一维排列单元构成的成像区域，并且根据从该单元发出的电荷量产生范围图像。 一个单元包括光响应区域; 在第一和第二长边L1，L2的相对方向上插入光栅电极PG的两对第三半导体区域9a，9b; 设置在第三半导体区域9a，9b和光电极PG之间的第一和第二转移电极TX1，TX2; 布置在第三半导体区域9a，9b之间的第四半导体区域11a，11b，以便在第一和第二长边L1，L2的相反方向上插入光电极PG，彼此相对; 以及设置在第四半导体区域11a，11b和光电极PG之间的第三转移电极TX3。
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公开(公告)号：US08599364B2
公开(公告)日：2013-12-03
申请号：US12992422
申请日：2009-05-01
申请人： Mitsuhito Mase , Takashi Suzuki
发明人： Mitsuhito Mase , Takashi Suzuki
IPC分类号： G01C3/08
CPC分类号： G01C3/08 , G01S7/481 , G01S7/4863 , G01S17/89 , G01S17/936 , H01L27/14603 , H01L31/02024
摘要： The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities QL, QR output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.
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公开(公告)号：US20130128259A1
公开(公告)日：2013-05-23
申请号：US13813752
申请日：2011-06-16
申请人： Mitsuhito Mase , Takashi Suzuki
发明人： Mitsuhito Mase , Takashi Suzuki
CPC分类号： G01C3/00 , G01S7/4816 , G01S7/4861 , G01S17/89 , H01L27/14614
摘要： A photogate electrode has a planar shape of a rectangular shape having first and second long sides opposed to each other and first and second short sides opposed to each other. First and second semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second long sides are opposed. Third semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second short sides are opposed. The third semiconductor regions make a potential on the sides of the first and second short sides higher than a potential in a region located between the first and second semiconductor regions in a region immediately below the photogate electrode.
摘要翻译： 光栅电极具有矩形形状的平面形状，其具有彼此相对的第一和第二长边以及彼此相对的第一和第二短边。 第一和第二半导体区域彼此相对布置，其中光栅电极在第一和第二长边相对的方向之间。 第三半导体区域彼此相对布置，光栅电极在第一和第二短边相对的方向之间。 第三半导体区域使第一和第二短边的电位高于位于光栅电极正下方的区域中位于第一和第二半导体区域之间的电位。
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公开(公告)号：US20130120735A1
公开(公告)日：2013-05-16
申请号：US13810519
申请日：2011-06-16
申请人： Mitsuhito Mase , Takashi Suzuki
发明人： Mitsuhito Mase , Takashi Suzuki
IPC分类号： G01C3/02
CPC分类号： G01S17/89 , G01S7/4863
摘要： A light receiving region has a planar shape of a rectangular shape having a pair of long sides opposed to each other in a first direction and a pair of short sides opposed to each other in a second direction. First and second semiconductor regions are arranged as spatially separated from each other along the respective long sides. First and second gate electrodes are arranged each between the corresponding semiconductor region and the light receiving region. Third gate electrodes are arranged as spatially separated from each other between the first and second gate electrodes arranged along the long sides. Each of the third gate electrodes has a first electrode portion located between a third semiconductor region and the light receiving region, and a second electrode portion overlapping with the light receiving region and having a width in the second direction smaller than that of the first electrode portion.
摘要翻译： 光接收区域具有矩形形状的平面形状，其具有在第一方向上彼此相对的一对长边和在第二方向上彼此相对的一对短边。 第一半导体区域和第二半导体区域沿着相应的长边方向彼此空间地布置。 第一和第二栅电极分别布置在对应的半导体区域和光接收区域之间。 在沿长边布置的第一和第二栅电极之间，第三栅极电极彼此空间上分开布置。 每个第三栅极具有位于第三半导体区域和光接收区域之间的第一电极部分和与光接收区域重叠并且具有比第一电极部分的宽度小的第二方向的第二电极部分 。
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公开(公告)号：US20120312966A1
公开(公告)日：2012-12-13
申请号：US13578048
申请日：2011-02-23
IPC分类号： H01L27/146
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译： 由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。 并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。 驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得 更准确的范围图像。
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公开(公告)号：US20120181650A1
公开(公告)日：2012-07-19
申请号：US13498202
申请日：2010-11-18
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译： 范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。 光栅电极PG设置在表面1FT上。 第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。 第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。
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公开(公告)号：US08767189B2
公开(公告)日：2014-07-01
申请号：US12674199
申请日：2008-08-22
IPC分类号： G01C3/08
CPC分类号： H04N5/2352 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14603 , H04N5/3559 , H04N5/374 , H04N5/37452
摘要： A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials φTX1, φTX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers φBG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier φBG to carriers as a higher output of a background light is detected by a photodetector.
摘要翻译： 一对第一栅电极IGR，IGL设置在半导体衬底100上，使得光敏区SA和一对第一聚集区AR，AL之间的电位TX1和TX2交替地斜坡。 一对第二栅电极IGR，IGL设置在半导体衬底100上，以便控制每个插入在第一存储区域AR，AL和第二累积区域FDR，FDL之间的第一势垒栅的高度，并且增加 通过光电检测器检测作为背景光的较高输出的第一势垒＆amp; BG与载流子的高度。
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公开(公告)号：US20100231891A1
公开(公告)日：2010-09-16
申请号：US12674199
申请日：2008-08-22
CPC分类号： H04N5/2352 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14603 , H04N5/3559 , H04N5/374 , H04N5/37452
摘要： A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials φTX1, φTX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers φBG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier φBG to carriers as a higher output of a background light is detected by a photodetector.
摘要翻译： 一对第一栅电极IGR，IGL设置在半导体衬底100上，使得光敏区SA和一对第一聚集区AR，AL之间的电位TX1和TX2交替地斜坡。 一对第二栅电极IGR，IGL设置在半导体衬底100上，以便控制每个插入在第一存储区域AR，AL和第二累积区域FDR，FDL之间的第一势垒栅的高度，并且增加 通过光电检测器检测作为背景光的较高输出的第一势垒＆amp; BG与载流子的高度。
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