公开(公告)号：US20140217558A1

公开(公告)日：2014-08-07

申请号：US14250182

申请日：2014-04-10

Applicant: NICHIA CORPORATION

Inventor： Hiroaki TAMEMOTO

IPC: H01L29/06

CPC classification number: H01L29/0657 ,  B23K26/0006 ,  B23K26/3568 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/56 ,  B28D5/0011 ,  H01L21/78 ,  H01L33/0095

Abstract: A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent ones of the processed portions.

Abstract translation: 半导体元件包括衬底和半导体层。 基板具有第一主面和第二主面。 半导体层形成在基板的第一主面和第二主面之一的一侧。 基板具有多个隔离处理部分和从处理部分至少延伸到基板的第一主面并连接相邻处理部分的凹凸面。