公开(公告)号：US20180247871A1

公开(公告)日：2018-08-30

申请号：US15902756

申请日：2018-02-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Sho KUSAKA ,  Minoru YAMAMOTO ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L33/00

Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

公开(公告)号：US20240336014A1

公开(公告)日：2024-10-10

申请号：US18397920

申请日：2023-12-27

Applicant: NICHIA CORPORATION ,  Laser Systems Inc.

Inventor： Ryota TAOKA ,  Hiroaki TAMEMOTO

IPC: B29C65/16 ,  B29C65/00 ,  B29K23/00 ,  B29K27/18

CPC classification number: B29C65/1648 ,  B29C65/1664 ,  B29C66/1122 ,  B29C66/1142 ,  B29C66/712 ,  B29K2023/00 ,  B29K2023/06 ,  B29K2023/12 ,  B29K2027/18

Abstract: A manufacturing method of a resin component includes: providing a first resin member containing a polymer and a second resin member containing a polymer; and joining a first joining portion of the first resin member and a second joining portion of the second resin member to each other. The joining of the first resin member and the second resin member to each other includes irradiating the first joining portion of the first resin member with a laser light having a peak wavelength in a range from 350 nm to 420 nm is emitted in a presence of oxygen so as to cause multiphoton excitation of the first joining portion of the first resin member.

公开(公告)号：US20230387344A1

公开(公告)日：2023-11-30

申请号：US18310002

申请日：2023-05-01

Applicant: NICHIA CORPORATION

Inventor： Yoshiki YAMAGUCHI ,  Hiroki HAYASHI ,  Satoshi OKUMURA ,  Minoru YAMAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L2933/0066

Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

公开(公告)号：US20210005777A1

公开(公告)日：2021-01-07

申请号：US16908354

申请日：2020-06-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Minoru YAMAMOTO ,  Satoshi OKUMURA ,  Hiroki OKAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

公开(公告)号：US20150357514A1

公开(公告)日：2015-12-10

申请号：US14830145

申请日：2015-08-19

Applicant: NICHIA CORPORATION

Inventor： Hiroaki TAMEMOTO

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/10 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L2933/0033

Abstract: A method for manufacturing a light emitting element includes: preparing a wafer that has a substrate in which a first main face is provided with a plurality of convex components; and dividing the wafer along first dividing lines and second dividing lines. The convex components are in the form of circular cones or truncated circular cones, each of which having a circular bottom face and a side face that is connected to the bottom face, and disposed regularly so that a plurality of bounded regions are present around the convex components, and a shortest distance between the convex components and the centers of the bounded regions is less than a radius of the bottom faces of the convex components. The first and second dividing lines extend in a direction that intersects straight lines that link the centers of the plurality of bounded regions around a single convex component.

Abstract translation: 一种发光元件的制造方法，包括：准备具有基板的晶片，所述基板的第一主面设置有多个凸部; 并且沿着第一分割线和第二分割线分割晶片。 凸形部件为圆锥体或截头圆锥体的形式，每个圆锥体具有圆形底面和连接到底面的侧面，并且规则地布置，使得围绕凸部存在多个有界区域 凸起部件和有界区域的中心之间的最短距离小于凸部件的底面的半径。 第一分割线和第二分割线在与多个有界区域的中心围绕单个凸部分连接的直线相交的方向上延伸。

公开(公告)号：US20240405155A1

公开(公告)日：2024-12-05

申请号：US18658369

申请日：2024-05-08

Applicant: NICHIA CORPORATION

Inventor： Nao MORINO ,  Takeru TABUCHI ,  Hiroaki TAMEMOTO

IPC: H01L33/00

Abstract: A method for transferring a light-emitting element from a first substrate to a second substrate includes: providing the light-emitting element fixed to a first surface of the first substrate via a release layer; and removing the release layer by irradiating the release layer with laser light from a side of the second surface, opposite the first surface, through the first substrate. An intensity distribution of the laser light on the first surface is, in the entire release layer, equal to or higher than a minimum intensity at which the release layer can be removed, and a maximum intensity of the intensity distribution is 150% or less of the minimum intensity.

公开(公告)号：US20240258170A1

公开(公告)日：2024-08-01

申请号：US18422925

申请日：2024-01-25

Applicant: NICHIA CORPORATION

Inventor： Minoru YAMAMOTO ,  Naoto INOUE ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L21/428

CPC classification number: H01L21/78 ,  H01L21/428

Abstract: A method of manufacturing a semiconductor element includes irradiating a laser beam on a wafer, which includes a sapphire substrate having a first face and a second face opposite the first face and a semiconductor structure disposed on the first face, from a second face side. The laser beam irradiated along a first direction parallel to the second face of the sapphire substrate is focused inside the sapphire substrate to thereby create a modified portion in the sapphire substrate along the first direction. The wafer is severed and separated into a number of semiconductor elements following the formation of a modified portion. In the step of forming a modified portion, the laser beam is focused closer to the second face than to the first face in a thickness direction of the sapphire substrate.

公开(公告)号：US20240001622A1

公开(公告)日：2024-01-04

申请号：US18343299

申请日：2023-06-28

Applicant: Nichia Corporation ,  Laser Systems Inc.

Inventor： Ryota TAOKA ,  Ryota TAKAO ,  Minoru YAMAMOTO ,  Hiroaki TAMEMOTO ,  Hiroshi YAGUCHI

IPC: B29C65/16 ,  B23K26/082 ,  B23K26/324

CPC classification number: B29C65/1661 ,  B29C65/1638 ,  B23K26/082 ,  B23K26/324

Abstract: A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

公开(公告)号：US20210036182A1

公开(公告)日：2021-02-04

申请号：US16945729

申请日：2020-07-31

Applicant: NICHIA CORPORATION

Inventor： Masayuki IBARAKI ,  Minoru YAMAMOTO ,  Naoto INOUE ,  Hiroaki TAMEMOTO

IPC: H01L33/00 ,  H01L33/20 ,  H01L25/075

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

公开(公告)号：US20150064823A1

公开(公告)日：2015-03-05

申请号：US14466354

申请日：2014-08-22

Applicant: NICHIA CORPORATION

Inventor： Hiroaki TAMEMOTO ,  Chihiro JUASA

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.

Abstract translation: 一种制造发光元件的方法，其包括制备具有基板和半导体结构的晶片，所述基板在对应于三角形格子上的格子点的位置处包括多个突起。 该方法包括通过沿着第一分割线用激光束照射基板，在基板中形成多个第一改质部分，通过沿着第二分割线用激光束照射基板，在基板中形成多个第二改性部分，以及 沿着第一修改部分和第二修改部分分割晶片以获得多个发光元件。