公开(公告)号：US11245865B2

公开(公告)日：2022-02-08

申请号：US17172147

申请日：2021-02-10

Applicant: PIXART IMAGING INC.

Inventor： Sen-Huang Huang ,  Tso-Sheng Tsai

IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H01L31/107

Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits, a plurality of output circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and a P-type or N-type select switch transistor. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. Each of the plurality of output circuits is shared by at least two pixel circuits.