公开(公告)号：US20140256276A1

公开(公告)日：2014-09-11

申请号：US13784821

申请日：2013-03-05

Applicant: QUALCOMM INCORPORATED

Inventor： Miao Li ,  Xiaohua Kong ,  Jingcheng Zhuang ,  Wei Wang

IPC: H04B1/18

CPC classification number: H04B3/50 ,  H04B3/30

Abstract: Techniques for accommodating an incoming signal at a front-end receiver via AC-coupling or DC-coupling are described herein. In one aspect, a front-end receiver comprises a differential input with a first data line and a second data line for receiving an incoming signal. The front-end receiver also comprises an AC-coupled switch coupled to the differential input, wherein the AC-coupled switch is configured to both perform high-pass filtering on the incoming signal and offset the filtered incoming signal with a DC-offset voltage if an AC-coupling mode of the receiver is enabled. The front-end receiver further comprises a DC-coupled switch coupled to the differential input, wherein the DC-coupled switch is configured to shift a common-mode voltage of the incoming signal if a DC-coupling mode of the receiver is enabled.

Abstract translation: 这里描述了用于通过AC耦合或DC耦合在前端接收器处容纳输入信号的技术。 一方面，前端接收机包括具有第一数据线的差分输入和用于接收输入信号的第二数据线。 前端接收器还包括耦合到差分输入的AC耦合开关，其中AC耦合开关被配置为对输入信号执行高通滤波，并且通过DC偏移电压偏移滤波的输入信号，如果 接收器的AC耦合模式被使能。 前端接收器还包括耦合到差分输入的DC耦合开关，其中如果接收器的DC耦合模式被使能，则DC耦合开关被配置为移位输入信号的共模电压。

公开(公告)号：US20140111250A1

公开(公告)日：2014-04-24

申请号：US13658778

申请日：2012-10-23

Applicant: QUALCOMM INCORPORATED

Inventor： Miao Li ,  Jingcheng Zhuang ,  Yan Hu ,  Xiaoliang Bai ,  Jing Kang

IPC: H03K3/00

CPC classification number: H03K19/017554 ,  H03K19/0005

Abstract: An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.

Abstract translation: 用于静电放电（ESD）保护的输出驱动器包括耦合在电源端子和第一差分输出端子之间的第一对堆叠金属氧化物半导体场效应晶体管（MOS）器件。 输出驱动器还包括耦合在第二差分输出端子和接地端子之间的第二对堆叠MOS器件。