公开(公告)号：US20190296255A1

公开(公告)日：2019-09-26

申请号：US16058176

申请日：2018-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho KIM ,  Chan Su KIM ,  Kun Su PARK ,  Eun Joo JANG ,  Sung Woo KIM ,  Hongkyu SEO

IPC: H01L51/50 ,  H01L51/56

Abstract: An electroluminescent device and a display device including the same are disclosed. The electroluminescent device includes a first electrode, an electron transport layer disposed on the first electrode and including inorganic oxide particles, a self-assembled monolayer disposed on the electron transport layer, an emission layer disposed on the self-assembled monolayer and including light emitting particles, a hole transport layer disposed on the emission layer, and a second electrode disposed on the hole transport layer.

公开(公告)号：US20190157596A1

公开(公告)日：2019-05-23

申请号：US16034442

申请日：2018-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Tae Ho KIM ,  Eun Joo JANG ,  Hongkyu SEO ,  Sang Jin LEE ,  Dae Young CHUNG ,  Oul CHO

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.

公开(公告)号：US20190157595A1

公开(公告)日：2019-05-23

申请号：US16001227

申请日：2018-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu SEO ,  Eun Joo JANG ,  Dae Young CHUNG ,  Tae-Ho KIM ,  Sang Jin LEE

IPC: H01L51/50 ,  H01L51/52

CPC classification number: H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/5004 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5206 ,  H01L51/5221 ,  H01L2251/5346 ,  H01L2251/552

Abstract: A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.