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1.发明申请公开(公告)号：US20190276734A1
公开(公告)日：2019-09-12
申请号：US16297965
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwanghee KIM , Jaejun CHANG , Oul CHO , Tae Hyung KIM , Sang Jin LEE , Eun Joo JANG , Young-soo JEONG , Moon Gyu HAN
Abstract: A quantum dot, and a light emitting device including the same is provided. The quantum dot includes a semiconductor nanocrystal and an organic ligand bound to the surface of the semiconductor nanocrystal, wherein the organic ligand includes a first ligand derived from a first thiol compound including a C12 or more aliphatic hydrocarbon group, and a second ligand derived from a second thiol compound including a C8 or less aliphatic hydrocarbon group.
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公开(公告)号：US20190157596A1
公开(公告)日：2019-05-23
申请号：US16034442
申请日：2018-07-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Tae Ho KIM , Eun Joo JANG , Hongkyu SEO , Sang Jin LEE , Dae Young CHUNG , Oul CHO
Abstract: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
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公开(公告)号：US20190157595A1
公开(公告)日：2019-05-23
申请号：US16001227
申请日：2018-06-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hongkyu SEO , Eun Joo JANG , Dae Young CHUNG , Tae-Ho KIM , Sang Jin LEE
CPC classification number: H01L51/502 , B82Y20/00 , B82Y30/00 , H01L51/5004 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5206 , H01L51/5221 , H01L2251/5346 , H01L2251/552
Abstract: A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.
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Patent Agency Ranking
公开(公告)号：US20190393418A1
公开(公告)日：2019-12-26
申请号：US16451443
申请日：2019-06-25
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Jaejun CHANG , O Hyun KWON , Tae Hyung KIM , Jhun Mo SON , Sang Jin LEE , Eun Joo JANG , Dae Young CHUNG
Abstract: A semiconductor nanocrystal-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, compound represented by Chemical Formula 2, or a combination thereof, and wherein Chemical Formula 1 and Chemical Formula 2 are the same as described in detailed herein.
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公开(公告)号：US20220010932A1
公开(公告)日：2022-01-13
申请号：US17208331
申请日：2021-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Jin LEE , Young Kwon KIM , Ungi BAK , Jonghyun LEE , Ui Yong JUNG
Abstract: An apparatus for supplying gas includes: an ion chamber; and a gas supply unit connected to the ion chamber, wherein the gas supply unit includes: a case having an internal space; an inactive gas supply unit connected to the ion chamber; and a hydrogen gas supply unit installed inside or outside of the case, wherein the hydrogen gas supply unit includes: a hydrogen gas generator generating hydrogen gas; a controller connected to the hydrogen gas generator; a dehumidifying filter connected to the controller and removing moisture from the hydrogen gas; and a purifying filter connected to the dehumidifying filter and removing an impurity from the hydrogen gas, wherein the hydrogen gas generator is configured to generate the hydrogen gas through a chemical reaction between a reactant and a hydrogen-containing solid raw material.
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公开(公告)号：US20210359238A1
公开(公告)日：2021-11-18
申请号：US17387281
申请日：2021-07-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Tae Ho KIM , Eun Joo JANG , Hongkyu SEO , Sang Jin LEE , Dae Young CHUNG , Oul CHO
Abstract: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
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公开(公告)号：US20190280232A1
公开(公告)日：2019-09-12
申请号：US16297923
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaejun CHANG , Sang Jin LEE , Eun Joo JANG , Ha Il KWON , Dae Young CHUNG
Abstract: A quantum dot device including an anode and a cathode facing each other, a quantum dot layer disposed between the anode and the cathode, and an electron transport layer disposed between the cathode and the quantum dot layer, wherein the quantum dot layer includes an emissive quantum dot emitting light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in a visible region, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the non-emissive quantum dot and a LUMO energy level of the electron transport layer is greater than or equal to about 0.5 electronvolts (eV).
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公开(公告)号：US20190189928A1
公开(公告)日：2019-06-20
申请号：US16203988
申请日：2018-11-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Young CHUNG , Moon Gyu HAN , Tae Hyung KIM , Sang Jin LEE , Eun Joo JANG
CPC classification number: H01L51/0067 , H01L51/0007 , H01L51/0059 , H01L51/0072 , H01L51/5016 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/5092 , H01L51/5096 , H01L51/5206 , H01L51/5221 , H01L2251/558
Abstract: An electroluminescent device and a display device includes the same are disclosed. The electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode and including a first organic material having a conjugated structure; an emission layer disposed directly on the hole transport layer and including a plurality of light emitting particles; an electron transport layer disposed on the emission layer; and a second electrode disposed on the electron transport layer, wherein at least one of the light emitting particles includes a core and a hydrophilic ligand attached to a surface of the core, wherein the hole transport layer has a first thickness and a second thickness at any two point locations, and the first thickness and the second thickness satisfy Equation 1.Equation 1 is described in the detailed description.
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