公开(公告)号：US20160064046A1

公开(公告)日：2016-03-03

申请号：US14938304

申请日：2015-11-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marcella Carissimi ,  Marco Pasotti ,  Fabio De Santis

IPC: G11C7/06

CPC classification number: G11C7/22 ,  G11C7/06 ,  G11C7/062 ,  G11C7/08 ,  G11C7/10 ,  G11C16/0441 ,  G11C16/28

Abstract: A non-volatile memory of a complementary type includes sectors of memory cells, with each cell formed by a direct memory cell and a complementary memory cell. Each sector of the non-volatile memory is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. A sector is selected and a determination is made as to a number of memory cells in the programmed state and a number of memory cells in the erased state. From this information, the condition of the selected sector is identified from a comparison between the number of memory cells in the programmed state and the number of memory cells in the erased state.

Abstract translation: 互补型的非易失性存储器包括存储器单元的扇区，每个单元由直接存储单元和互补存储单元形成。 当相应的存储器单元处于相同的状态并且处于写入状态时，非易失性存储器的每个扇区处于非写入状态，其中当其中的每个位置存储第一逻辑值或第二逻辑值时， 位置分别处于不同状态的第一组合或处于不同状态的第二组合中。 选择扇区，并且确定处于编程状态的多个存储单元和被擦除状态的多个存储单元。 根据该信息，通过编程状态下的存储单元的数量和被擦除状态的存储单元的数量之间的比较来识别所选扇区的状态。