Phase modulator device and method
    21.
    发明授权

    公开(公告)号:US11644697B2

    公开(公告)日:2023-05-09

    申请号:US16988480

    申请日:2020-08-07

    CPC classification number: G02F1/035 G02B6/12004 G02F1/0147 G02F2201/063

    Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

    PHASE MODULATOR DEVICE AND METHOD
    22.
    发明申请

    公开(公告)号:US20210055579A1

    公开(公告)日:2021-02-25

    申请号:US16988480

    申请日:2020-08-07

    Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

    PHOTONIC IC CHIP
    23.
    发明申请
    PHOTONIC IC CHIP 审中-公开

    公开(公告)号:US20200310027A1

    公开(公告)日:2020-10-01

    申请号:US16821370

    申请日:2020-03-17

    Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

    Electro-optic device with multiple photonic layers and related methods

    公开(公告)号:US10393958B2

    公开(公告)日:2019-08-27

    申请号:US16029365

    申请日:2018-07-06

    Abstract: A method for making an electro-optic device includes forming a first photonic device having a first material in a first photonic layer over a substrate layer. A second photonic layer with a second photonic device is formed over the first photonic layer and includes a second material different than the first material. A dielectric layer is formed over the second photonic layer. A first electrically conductive via extending through the dielectric layer and the second photonic layer is formed so as to couple to the first photonic device. A second electrically conductive via extending through the dielectric layer and coupling to the second photonic device is formed. A third electrically conductive via extending through the dielectric layer, the second photonic layer, and the first photonic layer is formed so as to couple to the substrate layer.

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