公开(公告)号：US20240413174A1

公开(公告)日：2024-12-12

申请号：US18807906

申请日：2024-08-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung Jin JEON ,  Eok Su KIM ,  Joon Seok PARK ,  So Young KOO ,  Tae Sang KIM ,  Jun Hyung LIM

IPC: H01L27/12

Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

公开(公告)号：US20230127261A1

公开(公告)日：2023-04-27

申请号：US17860593

申请日：2022-07-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun KIM ,  So Young KOO ,  Eok Su KIM ,  Yun Yong NAM ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L25/16

Abstract: A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiNx), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiNx) is in a range of about 1:0.6 to about 1:1.5.

公开(公告)号：US20220173128A1

公开(公告)日：2022-06-02

申请号：US17398566

申请日：2021-08-10

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun KIM ,  So Young KOO ,  Eok Su KIM ,  Yun Yong NAM ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L29/786

Abstract: A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.

公开(公告)号：US20220013608A1

公开(公告)日：2022-01-13

申请号：US17220966

申请日：2021-04-02

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun KIM ,  So Young KOO ,  Eok Su KIM ,  Yun Yong NAM ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.

公开(公告)号：US20210249499A1

公开(公告)日：2021-08-12

申请号：US17074323

申请日：2020-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Kyung Jin JEON ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: A display device and a method of driving a display device are provided. A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern, a buffer layer on the first conductive layer, a semiconductor layer including a semiconductor pattern on the buffer layer, a gate insulating layer on the semiconductor pattern, a second conductive layer including a gate electrode on the gate insulating layer, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including a first conductive pattern electrically coupling the lower light blocking pattern to the semiconductor pattern, wherein the first conductive pattern is coupled to the lower light blocking pattern through a first contact hole passing through the planarization layer and the buffer layer, and coupled to the semiconductor pattern through a second contact hole passing through the planarization layer.

公开(公告)号：US20210036029A1

公开(公告)日：2021-02-04

申请号：US16876984

申请日：2020-05-18

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok PARK ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Hyung Jun KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362

Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

公开(公告)号：US20210036028A1

公开(公告)日：2021-02-04

申请号：US16836651

申请日：2020-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa KIM ,  Joon Seok PARK ,  So Young KOO ,  Tae Sang KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.

公开(公告)号：US20200075641A1

公开(公告)日：2020-03-05

申请号：US16529516

申请日：2019-08-01

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Tae Sang KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L27/15 ,  G09G3/32

Abstract: A display device includes: a substrate including a display area and a non-display area; a gate driver disposed on the substrate in the non-display area and including a plurality of stages that generate a gate signal and output the gate signal to the display area; a switching transistor and a driving transistor disposed on the substrate in the display area; and a light emitting diode connected to the driving transistor, wherein each of the plurality of stages may include a plurality of transistors, wherein a channel layer of the driving transistor includes a first oxide semiconductor material, and a channel layer of the plurality of transistors included in each of the plurality of stages includes a second oxide semiconductor material, wherein the first oxide semiconductor material is different from the second oxide semiconductor material, and wherein the second oxide semiconductor material may include tin.

公开(公告)号：US20200052056A1

公开(公告)日：2020-02-13

申请号：US16539761

申请日：2019-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Yeon Keon MOON ,  Kwang Suk KIM ,  Tae Sang KIM ,  Geunchul PARK ,  Kyung Jin JEON

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.