DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240188335A1

    公开(公告)日:2024-06-06

    申请号:US18356445

    申请日:2023-07-21

    摘要: A display device and a manufacturing method of the display device are provided. The display device includes a substrate, a passivation layer disposed on the substrate, a metal oxide layer disposed on the passivation layer, a via layer disposed on the metal oxide layer, a first electrode disposed on the via layer, a pixel defining layer covering the metal oxide layer and an edge portion of the first electrode and dividing a light-emitting area, an organic layer disposed on the first electrode and the pixel defining layer, and a second electrode disposed on the organic layer, wherein a side of the pixel defining layer protrudes more outward than a side of the metal oxide layer, and at least a portion of the organic layer is disconnected at a point between the side of the pixel defining layer and the passivation layer.

    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号:US20160300859A1

    公开(公告)日:2016-10-13

    申请号:US14856405

    申请日:2015-09-16

    摘要: A thin film transistor display panel including: a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor.

    摘要翻译: 一种薄膜晶体管显示面板,包括:第一绝缘基板; 布置在第一绝缘基板和第一栅极绝缘层之间的第一半导体; 设置在所述第一栅极绝缘层上的栅电极,所述栅电极与所述第一半导体重叠; 设置在所述栅电极上的第二栅极绝缘层; 布置在第二栅绝缘层上的第二半导体,第二半导体与栅电极重叠; 设置在所述第二半导体上的层间绝缘层; 以及设置在层间绝缘层彼此间隔开的源电极和漏电极,源电极和漏电极连接到第一半导体和第二半导体。

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240251638A1

    公开(公告)日:2024-07-25

    申请号:US18538365

    申请日:2023-12-13

    摘要: A display device includes: a substrate; a plurality of pixel electrodes that are disposed above the substrate; a first insulating layer that has a first opening and is disposed on a pixel electrode of the plurality of pixel electrodes; an auxiliary electrode that is disposed on the first insulating layer; an intermediate layer that is disposed on the pixel electrode and includes a light-emitting layer disposed within the first opening; a common electrode that is disposed on the intermediate layer; and a first encapsulating layer that is disposed above the common electrode. An end portion of the common electrode contacts a side surface of the auxiliary electrode and is electrically connected to the side surface of the auxiliary electrode, and an end portion of the first encapsulating layer is disposed at the side surface of the auxiliary electrode and is disposed lower than an upper surface of the auxiliary electrode.

    DISPLAY DEVICE
    5.
    发明申请

    公开(公告)号:US20210056898A1

    公开(公告)日:2021-02-25

    申请号:US16850775

    申请日:2020-04-16

    摘要: A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.

    THIN FILM TRANSISTOR ARRAY PANEL
    6.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20160365368A1

    公开(公告)日:2016-12-15

    申请号:US14963769

    申请日:2015-12-09

    摘要: A thin-film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a first self-assembled monolayer disposed on the first gate electrode, a gate insulating layer disposed on the first self-assembled monolayer, a semiconductor disposed on the gate insulating layer, a drain electrode overlapping the semiconductor, the drain electrode being separated from and facing a source electrode with respect to the semiconductor, a first interlayer insulating layer disposed on the source electrode and the drain electrode, a second self-assembled monolayer disposed on the first interlayer insulating layer, a second gate electrode disposed on the second self-assembled monolayer, a second interlayer insulating layer disposed on the second gate electrode, and a pixel electrode disposed on the second interlayer insulating layer and connected to the drain electrode.

    摘要翻译: 薄膜晶体管阵列面板包括基板,设置在基板上的第一栅极电极,设置在第一栅电极上的第一自组装单层,设置在第一自组装单层上的栅极绝缘层,设置在第一自组装单层上的半导体 所述栅极绝缘层,与所述半导体重叠的漏电极,所述漏电极相对于所述半导体分离并面对源电极,设置在所述源电极和所述漏电极上的第一层间绝缘层,第二自组装单层 设置在第一层间绝缘层上的第二栅电极,设置在第二自组装单层上的第二栅电极,设置在第二栅电极上的第二层间绝缘层,以及设置在第二层间绝缘层上并连接到漏极的像素电极 。

    THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME 有权
    薄膜晶体管基板,其制造方法和具有该薄膜晶体管的液晶显示面板

    公开(公告)号:US20160133754A1

    公开(公告)日:2016-05-12

    申请号:US14661470

    申请日:2015-03-18

    摘要: A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer.

    摘要翻译: 薄膜晶体管衬底包括衬底,衬底上的底栅,衬底上的第一绝缘层和底栅,第一绝缘层上的漏极,第一绝缘层上的源,源包括第一绝缘层 漏极的第一侧的源极和在漏极的第二侧的第二源极,在第一绝缘层上的有源层,有源层包括接触漏极和第一源极的第一有源层和与第一源极接触的第二有源层 漏极和第二源极,漏极,源极和有源层上的第二绝缘层,以及第二绝缘层上的顶栅极。