公开(公告)号：US10812037B2

公开(公告)日：2020-10-20

申请号：US16417857

申请日：2019-05-21

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Je Hong Kyoung ,  Tae Kyung Lee ,  Sung Sun Kim ,  Jin Suk Son ,  Ran Hee Shin ,  Hwa Sun Lee

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/15

Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the first electrode; and a second electrode disposed on the piezoelectric layer; wherein the first electrode includes an aluminum alloy layer containing scandium (Sc), and has a surface roughness of 2.4 nm or less, based on an arithmetic mean roughness.

公开(公告)号：US10756701B2

公开(公告)日：2020-08-25

申请号：US16039952

申请日：2018-07-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Ran Hee Shin ,  Je Hong Kyoung ,  Hwa Sun Lee ,  Jin Suk Son ,  Sung Sun Kim

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/13 ,  H03H9/17

Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).

公开(公告)号：US10193526B2

公开(公告)日：2019-01-29

申请号：US15392068

申请日：2016-12-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  In Young Kang ,  Ran Hee Shin ,  Jin Suk Son

IPC: H03H9/54 ,  H03H9/17 ,  H03H9/02 ,  H03H3/02

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.