公开(公告)号：US11418168B2

公开(公告)日：2022-08-16

申请号：US15875541

申请日：2018-01-19

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Jin Suk Son ,  Je Hong Kyoung ,  Ran Hee Shin ,  Sung Sun Kim

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/13 ,  H03H9/02

Abstract: An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer and having a hydrophobic layer disposed on at least one of a portion of an upper surface of the cavity and a portion of a lower surface of the cavity; and a resonating portion disposed on the cavity and having a second electrode on a piezoelectric layer on a first electrode.

公开(公告)号：US10965271B2

公开(公告)日：2021-03-30

申请号：US15875207

申请日：2018-01-19

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Jun Lim ,  Jong Woon Kim ,  Ran Hee Shin ,  Sung Sun Kim

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/13 ,  H03H9/02

Abstract: An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer; a resonating portion disposed on the cavity and having a first electrode, a piezoelectric layer, and a second electrode stacked thereon; a protective layer disposed on the resonating portion; and a hydrophobic layer formed on the protective layer.

公开(公告)号：US11695385B2

公开(公告)日：2023-07-04

申请号：US16449561

申请日：2019-06-24

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Je Hong Kyoung ,  Sung Sun Kim ,  Jin Suk Son ,  Ran Hee Shin ,  Hwa Sun Lee

IPC: H03H9/02 ,  H03H9/17

CPC classification number: H03H9/02102 ,  H03H9/02031 ,  H03H9/174 ,  H03H9/176

Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

公开(公告)号：US11558030B2

公开(公告)日：2023-01-17

申请号：US16591862

申请日：2019-10-03

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Ran Hee Shin ,  Jin Suk Son ,  Je Hong Kyoung

IPC: H03H9/13 ,  H03H9/17 ,  H03H9/02

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 Å and less than or equal to 1000 Å, or may be thinner than the first electrode.

公开(公告)号：US10892736B2

公开(公告)日：2021-01-12

申请号：US16168906

申请日：2018-10-24

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Je Hong Kyoung ,  Jin Suk Son ,  Ran Hee Shin ,  Hwa Sun Lee

IPC: H03H9/17 ,  H03H3/04 ,  G01N21/85 ,  G01N1/22 ,  G01N33/00 ,  G08B17/117 ,  G01N1/24 ,  H03H3/02

Abstract: A fine dust concentration sensor includes a bulk acoustic resonator and a cap including an upper portion with holes therein and a lateral portion connected to the upper portion to accommodate the bulk acoustic resonator. An upper surface of the upper portion of the cap is coated with a hydrophobic material.

公开(公告)号：US11601110B2

公开(公告)日：2023-03-07

申请号：US16356333

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee Shin ,  Tae Kyung Lee ,  Je Hong Kyoung ,  Jin Suk Son ,  Hwa Sun Lee ,  Sung Sun Kim

IPC: H03H9/13 ,  H01L41/047 ,  H01L41/187 ,  H03H9/02 ,  H01L41/316 ,  H03H9/17 ,  C22C21/00 ,  H03H3/02 ,  H03H9/54

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.

公开(公告)号：US11595016B2

公开(公告)日：2023-02-28

申请号：US16395486

申请日：2019-04-26

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Jin Suk Son ,  Je Hong Kyoung ,  Sung Sun Kim ,  Ran Hee Shin ,  Hwa Sun Lee

IPC: H03H9/02 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator includes: a substrate; a seed layer disposed on the substrate, and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and the top electrode includes a scandium (Sc)-containing aluminum alloy layer.

公开(公告)号：US11303262B2

公开(公告)日：2022-04-12

申请号：US16590768

申请日：2019-10-02

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Je Hong Kyoung ,  Moon Chul Lee ,  Jin Suk Son ,  Ran Hee Shin ,  Hwa Sun Lee

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/05 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.

公开(公告)号：US10855249B2

公开(公告)日：2020-12-01

申请号：US16522093

申请日：2019-07-25

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Jae Sang Lee ,  Ran Hee Shin ,  In Young Kang ,  Sung Sun Kim ,  Sung Han

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H9/60

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.

公开(公告)号：US10009007B2

公开(公告)日：2018-06-26

申请号：US15184230

申请日：2016-06-16

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Sung Han ,  Hwa Sun Lee ,  Seung Joo Shin ,  Ran Hee Shin

IPC: H03H9/13 ,  H03H9/54 ,  H03H9/02 ,  H03H9/17

CPC classification number: H03H9/13 ,  H03H9/02149 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode disposed on the substrate, and a piezoelectric layer disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes an alloy of molybdenum and tantalum.