公开(公告)号：US11256605B2

公开(公告)日：2022-02-22

申请号：US16991354

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bong-Kil Jung ,  Hyunggon Kim ,  Donghoon Jeong ,  Myung-Hoon Choi

IPC: G06F11/36 ,  G06F11/30 ,  G11C16/08 ,  G11C7/10 ,  G11C7/22

Abstract: A nonvolatile memory device includes a memory cell region including first metal pads, and a peripheral circuit region. The peripheral circuit region includes second metal pads, a signal storage circuit that stores control signals and a data signal received from external of the nonvolatile memory device, a debugging information generator that generates debugging information based on the stored control signals and the stored data signal, and a debugging information register that outputs the debugging information in response to a debugging information external of the nonvolatile memory device. The peripheral circuit region is vertically connected to the memory cell region by the first metal pads and the second metal pads.

公开(公告)号：US10761969B2

公开(公告)日：2020-09-01

申请号：US15981443

申请日：2018-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bong-Kil Jung ,  Hyunggon Kim ,  Donghoon Jeong ,  Myung-Hoon Choi

IPC: G06F11/36 ,  G06F3/06 ,  G06F12/02

Abstract: An operation method of a nonvolatile memory device includes receiving control signals and a data signal from external of the nonvolatile memory device, generating debugging information based on the control signals and the data signal, receiving a debugging information request from external of the nonvolatile memory device, and outputting the debugging information in response to the debugging information request.