公开(公告)号：US20200151539A1

公开(公告)日：2020-05-14

申请号：US16448636

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Youngdeok SEO ,  Jinbaek SONG ,  Sanghyun CHOI

IPC: G06N3/04 ,  G11C16/04 ,  G11C16/26 ,  G06N5/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.