公开(公告)号：US20210050067A1

公开(公告)日：2021-02-18

申请号：US16819374

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo OH ,  Jinbaek SONG ,  Kangho ROH

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/16 ,  G06K9/62 ,  G06N3/04

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US20210366562A1

公开(公告)日：2021-11-25

申请号：US17395872

申请日：2021-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo OH ,  Jinbaek SONG ,  Kangho ROH

IPC: G11C16/34 ,  G11C16/26 ,  G06N3/04 ,  G06K9/62 ,  G11C16/16

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US20200151539A1

公开(公告)日：2020-05-14

申请号：US16448636

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Youngdeok SEO ,  Jinbaek SONG ,  Sanghyun CHOI

IPC: G06N3/04 ,  G11C16/04 ,  G11C16/26 ,  G06N5/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.