公开(公告)号：US09093479B2

公开(公告)日：2015-07-28

申请号：US14074817

申请日：2013-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungkeun Son ,  Changhyun Lee ,  Jaegoo Lee ,  Kwang Soo Seol ,  Byungkwan You

IPC: H01L29/72 ,  H01L29/792 ,  H01L29/66 ,  H01L27/115

CPC classification number: H01L29/66833 ,  H01L27/11582 ,  H01L29/7926

Abstract: A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor substrate; and a gate insulating layer between the active pillars and the gate patterns, wherein corners of the gate patterns adjacent to the active pillars are rounded.

Abstract translation: 非易失性存储器件及其形成方法，所述器件包括半导体衬底; 堆叠在所述半导体衬底上的多个栅极图案; 栅极图案之间的栅极间电介质图案; 依次穿过栅极图案和栅极间电介质图案以接触半导体衬底的有源支柱; 以及在活性柱和栅极图案之间的栅极绝缘层，其中与活性柱相邻的栅极图案的角部是圆形的。