公开(公告)号：US20140092685A1

公开(公告)日：2014-04-03

申请号：US14052227

申请日：2013-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chi Weon YOON ,  Donghyuk CHAE ,  Jae-Woo PARK ,  Sang-Wan NAM

IPC: G11C16/34 ,  G11C16/16 ,  G11C16/04

CPC classification number: G11C16/3445 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/16 ,  H01L29/792

Abstract: A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

Abstract translation: 操作非易失性存储器件的方法包括对与多个串选择线（SSL）相关联的存储器单元执行擦除操作，与构成存储块的多个SSL相关联的存储器单元，以及将擦除操作 在对与第一SSL相关联的第一存储器单元进行擦除操作之后，与第二SSL相关联的第二存储器单元。