公开(公告)号：US06756086B2

公开(公告)日：2004-06-29

申请号：US10090771

申请日：2002-03-06

申请人： Masataka Hasegawa ,  Masahiko Ogura ,  Daisuke Takeuchi ,  Hideyo Okushi ,  Naoto Kobayashi ,  Sadanori Yamanaka

发明人： Masataka Hasegawa ,  Masahiko Ogura ,  Daisuke Takeuchi ,  Hideyo Okushi ,  Naoto Kobayashi ,  Sadanori Yamanaka

IPC分类号： C23C1448

CPC分类号： H01L33/34 ,  C23C16/274 ,  H01L21/0415 ,  H01L21/265 ,  H01L29/1602 ,  Y10T428/30

摘要： A diamond semiconductor includes a high-quality thin diamond film layer with few crystal defects and few impurities, implanted with ions of dopant elements and controllable in conductivity determined by a kind and a concentration of the dopant elements. The diamond semiconductor is fabricated by a method including the step of implanting ions of dopant elements into a high-quality thin diamond film layer with few crystal defects and few impurities under conditions that can attain given distribution of concentrations of the dopant elements and with the high-quality thin diamond film layer kept to a temperature in accordance with the conditions so as not to be graphitized, to thereby enable the diamond semiconductor to have conductivity determined by a kind and a concentration of the dopant elements.

摘要翻译： 金刚石半导体包括具有很少晶体缺陷和少量杂质的高品质薄金刚石膜层，注入掺杂元素的离子并且可通过掺杂元素的种类和浓度确定导电性。 金刚石半导体是通过一种方法制造的，该方法包括以下步骤：将掺杂元素的离子注入到能够获得给定掺杂剂元素的浓度分布的条件下几乎没有晶体缺陷和少量杂质的高质量薄金刚石膜层 质量的金刚石薄膜层根据条件保持温度以便不被石墨化，从而使金刚石半导体具有由掺杂剂元素的种类和浓度确定的导电性。